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1The 2023 terahertz science and technology roadmap
A. Leitenstorfer, A. Moskalenko, T. Kampfrath, J. Kono, E. Castro-Camus, K. Peng, N. Qureshi, D. Turchinovich, K. Tanaka, A. Markelz and 44 other author(s). Journal of physics. D, Applied physics, 56 (22): 223001 (2023)
18 days ago by @unibiblio
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1A Compact Model Extending the BSIM3 Model for Silicon Carbide Power MOSFETs
L. Yan, K. Sharma, and I. Kallfass. IEEE transactions on power electronics, 38 (4): 4613-4622 (2023)
18 days ago by @unibiblio
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1Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates
M. Moser, M. Pradhan, M. Alomari, B. Schoch, K. Sharma, I. Kallfass, A. Garcia-Luque, T. Martin-Guerrero, and J. Burghartz. 2022 17th European Microwave Integrated Circuits Conference, page 80-83. Piscataway, NJ, IEEE, (2022)
26 days ago by @unibiblio
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1The technology platform of the EIVE CubeSat mission for high throughput downlinks at W-band
L. Manoliu, B. Schoch, S. Haußmann, A. Tessmann, R. Henneberger, J. Freese, F. Steinmetz, D. Wrana, J. Wörmann, M. Koller and 1 other author(s). Acta astronautica, 205 (April): 80-93 (2023)
2 months ago by @unibiblio
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1Simulation-to-Reality based Transfer Learning for the Failure Analysis of SiC Power Transistors
S. Kamm, S. Bickelhaupt, K. Sharma, N. Jazdi-Motlagh, I. Kallfass, and M. Weyrich. 2022 IEEE 27th International Conference on Emerging Technologies and Factory Automation (ETFA), Piscataway, IEEE, (2022)
2 months ago by @unibiblio
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3Characterization of Online Junction Temperature of the SiC power MOSFET by Combination of Four TSEPs using Neural Network
K. Sharma, S. Kamm, K. Munoz Baron, and I. Kallfass. 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), IEEE, (2022)
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1Design Considerations for Fast On-State Voltage Measurement Circuits
M. Weiser, M. Rueß, and I. Kallfass. 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Piscataway, NJ, IEEE, (2022)
2 months ago by @unibiblio
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2Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure
M. Pradhan, M. Moser, M. Alomari, J. Burghartz, and I. Kallfass. ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), page 400-403. Piscataway, NJ, IEEE, (2022)
4 months ago by @unibiblio
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2Polarisation Multiplex in 300 GHz Wireless Communication Link using Orthomode Transducer
S. Haußmann, D. Wrana, B. Schoch, A. Tessmann, R. Henneberger, and I. Kallfass. 2022 52st European Microwave Conference, page 776-779. Piscataway, NJ, IEEE, (2022)
4 months ago by @unibiblio
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2Polarisation Multiplex in 300GHz Wireless Communication Link Using Orthomode Transducer
S. Haußmann, D. Wrana, B. Schoch, A. Tessmann, R. Henneberger, and I. Kallfass. 2022 52st European Microwave Conference, Piscataway, NJ, IEEE, (2022)
4 months ago by @unibiblio
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1Non-linear impairments of 300 GHz MPAs for THz communications
L. John, D. Wrana, B. Schoch, A. Leuther, P. Szriftgiser, and G. Ducournau. IRMMW-THz 2022 : 47th International Conference on Infrared, Millimeter and Terahertz Waves, IEEE, (2022)
8 months ago by @unibiblio
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1Design of a Wideband E-band Radar Frontend for a Novel Incoherent Self-Mixing Radar Principle
J. Wörmann, S. Ebeling, B. Schoch, and I. Kallfass. 2022 IEEE/MTT-S International Microwave Symposium : IMS 2022, page 538-541. Piscataway, IEEE, (2022)
9 months ago by @unibiblio
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3Thermal Topology Optimization for High Power Density Power Electronic Systems in Passively Cooled Housings
J. Weimer, D. Koch, M. Nitzsche, J. Haarer, and I. Kallfass. 2021 IEEE Design Methodologies Conference (DMC), Piscataway, IEEE, (2021)
10 months ago by @unibiblio
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1A Passively-Coupled 39.5 GHz Colpitts Quadrature VCO in SiGe HBT Technology
J. Wörmann, A. Dyskin, S. Chartier, and I. Kallfass. 2021 16th European Microwave Integrated Circuits Conference (EuMIC), page 209-212. Piscataway, IEEE, (2022)
10 months ago by @unibiblio
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1Extension of ASM HEMT Model with Trapping Effects in GaN Power Devices
M. Weiser, and I. Kallfass. 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), Piscataway, IEEE, (2021)
10 months ago by @unibiblio
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1Accounting for Acquisition Circuit Temperature in Accurate Online Junction Temperature Estimation
K. Muñoz Barón, K. Sharma, M. Nitzsche, and I. Kallfass. 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), Piscataway, IEEE, (2021)
10 months ago by @unibiblio
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1Implementation of Slow-Wave Thin-Film Microstrip Transmission Lines in a 35nm InGaAs Technology
A. Gatzastras, H. Massler, A. Leuther, S. Chartier, and I. Kallfass. 2021 16th European Microwave Integrated Circuits Conference (EuMIC), Piscataway, IEEE, (2022)
10 months ago by @unibiblio
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2Additive Manufacturing of 10 W Power Converter with High Power Density
D. Dell, J. Weimer, and I. Kallfass. 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), Piscataway, IEEE, (2021)
10 months ago by @unibiblio
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3Design Methodology for Ultra-Compact Rogowski Coils for Current Sensing in Low-Voltage High-Current GaN Based DC/DC-Converters
D. Koch, H. Bantle, J. Acuna, P. Ziegler, and I. Kallfass. 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), Piscataway, IEEE, (2021)
10 months ago by @unibiblio
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3Accuracy Study of Calorimetric Switching Loss Energy Measurements for Wide Bandgap Power Transistors
J. Weimer, D. Koch, and I. Kallfass. 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe), Piscataway, IEEE, (2021)
10 months ago by @unibiblio
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publications (hide)113
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1The 2023 terahertz science and technology roadmap

1A Compact Model Extending the BSIM3 Model for Silicon Carbide Power MOSFETs

1Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates

1The technology platform of the EIVE CubeSat mission for high throughput downlinks at W-band

1Simulation-to-Reality based Transfer Learning for the Failure Analysis of SiC Power Transistors

3Characterization of Online Junction Temperature of the SiC power MOSFET by Combination of Four TSEPs using Neural Network

1Design Considerations for Fast On-State Voltage Measurement Circuits

2Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure

2Polarisation Multiplex in 300 GHz Wireless Communication Link using Orthomode Transducer

2Polarisation Multiplex in 300GHz Wireless Communication Link Using Orthomode Transducer

1Non-linear impairments of 300 GHz MPAs for THz communications

1Design of a Wideband E-band Radar Frontend for a Novel Incoherent Self-Mixing Radar Principle

3Thermal Topology Optimization for High Power Density Power Electronic Systems in Passively Cooled Housings

1A Passively-Coupled 39.5 GHz Colpitts Quadrature VCO in SiGe HBT Technology

1Extension of ASM HEMT Model with Trapping Effects in GaN Power Devices

1Accounting for Acquisition Circuit Temperature in Accurate Online Junction Temperature Estimation

1Implementation of Slow-Wave Thin-Film Microstrip Transmission Lines in a 35nm InGaAs Technology

2Additive Manufacturing of 10 W Power Converter with High Power Density

3Design Methodology for Ultra-Compact Rogowski Coils for Current Sensing in Low-Voltage High-Current GaN Based DC/DC-Converters

3Accuracy Study of Calorimetric Switching Loss Energy Measurements for Wide Bandgap Power Transistors

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