Please log in to take part in the discussion (add own reviews or comments).
Cite this publication
More citation styles
- please select -
%0 Conference Paper
%1 moser2022development
%A Moser, M.
%A Pradhan, M.
%A Alomari, M.
%A Schoch, Benjamin
%A Sharma, K.
%A Kallfass, Ingmar
%A Garcia-Luque, A.
%A Martin-Guerrero, T. M.
%A Burghartz, J. N.
%B 2022 17th European Microwave Integrated Circuits Conference
%C Piscataway, NJ
%D 2022
%I IEEE
%K
%P 80-83
%T Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates
%@ 978-2-87487-070-5
@inproceedings{moser2022development,
added-at = {2023-11-14T16:29:05.000+0100},
address = {Piscataway, NJ},
affiliation = {Moser, M (Corresponding Author), Inst Mikroelekt Stuttgart IMS CHIPS, Allmandring 30A, D-70569 Stuttgart, Germany.
Moser, M.; Pradhan, M.; Alomari, M.; Burghartz, J. N., Inst Mikroelekt Stuttgart IMS CHIPS, Allmandring 30A, D-70569 Stuttgart, Germany.
Schoch, B.; Sharma, K.; Kallfass, I, Univ Stuttgart, Inst Robust Power Semicond Syst ILH, Pfaffenwaldring 47, D-70569 Stuttgart, Germany.
Garcia-Luque, A.; Martin-Guerrero, T. M., Univ Malaga, Telecommun Res Inst TELMA, Bulevar Louis Pasteur 35, Malaga 29010, Spain.},
author = {Moser, M. and Pradhan, M. and Alomari, M. and Schoch, Benjamin and Sharma, K. and Kallfass, Ingmar and Garcia-Luque, A. and Martin-Guerrero, T. M. and Burghartz, J. N.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/257c5432757c8b12b8cea7b297fddb182/unibiblio},
booktitle = {2022 17th European Microwave Integrated Circuits Conference},
eventdate = {2022-09-26/2022-09-27},
eventtitle = {17th European Microwave Integrated Circuits Conference (EuMIC)},
interhash = {675a790bb3604247c01803db4878baac},
intrahash = {57c5432757c8b12b8cea7b297fddb182},
isbn = {978-2-87487-070-5},
keywords = {},
language = {eng},
pages = {80-83},
publisher = {IEEE},
research-areas = {Engineering; Telecommunications},
timestamp = {2023-11-14T15:29:05.000+0100},
title = {Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates},
unique-id = {WOS:000936137800021},
venue = {Milan, Italy},
year = 2022
}