%0 Journal Article %1 yan2023compact %A Yan, Lixi %A Sharma, Kanuj %A Kallfass, Ingmar %D 2023 %I IEEE %J IEEE transactions on power electronics %K %N 4 %P 4613-4622 %R 10.1109/TPEL.2022.3232376 %T A Compact Model Extending the BSIM3 Model for Silicon Carbide Power MOSFETs %V 38

@article{yan2023compact, added-at = {2023-11-22T12:04:07.000+0100}, affiliation = {Yan, LX (Corresponding Author), Univ Stuttgart, Inst Robust Power Semicond Syst, D-70569 Stuttgart, Germany. Yan, Lixi; Sharma, Kanuj; Kallfass, Ingmar, Univ Stuttgart, Inst Robust Power Semicond Syst, D-70569 Stuttgart, Germany.}, author = {Yan, Lixi and Sharma, Kanuj and Kallfass, Ingmar}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2e61e2dd146604c884544321ee7e1cfbb/unibiblio}, doi = {10.1109/TPEL.2022.3232376}, interhash = {180eb3cbe92d18a85e9cf18e164bc77f}, intrahash = {e61e2dd146604c884544321ee7e1cfbb}, issn = {{0885-8993} and {1941-0107}}, journal = {IEEE transactions on power electronics}, keywords = {}, language = {eng}, number = 4, pages = {4613-4622}, publisher = {IEEE}, research-areas = {Engineering}, timestamp = {2023-11-22T11:04:07.000+0100}, title = {A Compact Model Extending the BSIM3 Model for Silicon Carbide Power MOSFETs}, unique-id = {WOS:000966317000001}, volume = 38, year = 2023 }