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A Compact Model Extending the BSIM3 Model for Silicon Carbide Power MOSFETs

, , and . IEEE transactions on power electronics, 38 (4): 4613-4622 (2023)
DOI: 10.1109/TPEL.2022.3232376

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A Compact Model Extending the BSIM3 Model for Silicon Carbide Power MOSFETs, , and . IEEE transactions on power electronics, 38 (4): 4613-4622 (2023)A Compact Model Adopting the EKV Model for a Silicon Vertical Power MOSFET, , and . 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), page 2383-2388. Piscataway, IEEE, (2021)Adopting the BSIM3 Model with Thermal Extension for a Si Vertical Power MOSFET, and . 2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC), page 68-74. Piscataway, IEEE, (2021)Adopting the BSIM3 Model to Describe the DC-IV Characteristics of a Vertical Power MOSFET, and . 2018 IEEE International Power Electronics and Application Conference and Exposition (PEAC), page 1885-1890. Piscataway, NJ, IEEE, (2018)Characterization and modeling of the reverse behavior of a vertical power MOSFET, , and . Microwave and Optical Technology Letters, 63 (8): 2090-2096 (2019)