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Disambiguation of "Horiguchi, N."

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Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

, , , , , , , , , , , , , , , , , and . ESSDERC, page 190-193. IEEE, (2013)

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Jan-Philipp Negel

Thin-disk multipass amplifier for fs pulses delivering 400 W of average and 2.0 GW of peak power for linear polarization as well as 235 W and 1.2 GW for radial polarization, , , , , , , and . Applied Physics. B, Lasers and optics, 123 (5): 156 (2017)

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Alexander Naubert

Rodion Novkin University of Stuttgart

Dr. phil. Michael Nerurkar University of Stuttgart

 

Other publications of authors with the same name

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors., , , , , , , , , and 8 other author(s). ESSDERC, page 190-193. IEEE, (2013)Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks., , , , , , , , , and 2 other author(s). ESSDERC, page 242-245. IEEE, (2012)Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements., , , , , , and . IEEE Trans. on Circuits and Systems, 59-II (7): 439-442 (2012)Experimental evidences and simulations of trap generation along a percolation path., , , , , , , , , and . ESSDERC, page 226-229. IEEE, (2015)CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs., , , , , , , , , and 1 other author(s). ESSDERC, page 330-333. IEEE, (2012)Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices., , , , , , , , , and 6 other author(s). IRPS, page 1-8. IEEE, (2019)Design Technology co-optimization for N10., , , , , , , , , and 18 other author(s). CICC, page 1-8. IEEE, (2014)