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Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review., , , , , , , and . Microelectronics Reliability, 54 (4): 682-697 (2014)Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow., , , , , , , , , and 5 other author(s). ESSDERC, page 238-241. IEEE, (2015)RTN distribution comparison for bulk, FDSOI and FinFETs devices., , , and . Microelectronics Reliability, 54 (9-10): 1749-1752 (2014)Experimental evidences and simulations of trap generation along a percolation path., , , , , , , , , and . ESSDERC, page 226-229. IEEE, (2015)Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits., , , , , , and . ISCAS, page 2449-2452. IEEE, (2015)Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs., , , , and . Microelectronics Reliability, 52 (9-10): 1918-1923 (2012)Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations., , , , and . Microelectronics Reliability, 55 (9-10): 1307-1312 (2015)Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D 'atomistic' simulation., , , , and . ESSDERC, page 109-112. IEEE, (2012)