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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectronics Reliability, (2018)Characterization and simulation methodology for time-dependent variability in advanced technologies., , , , , , , , , and 1 other author(s). CICC, page 1-8. IEEE, (2015)Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow., , , , , , , , , and 5 other author(s). ESSDERC, page 238-241. IEEE, (2015)ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology., , , , and . ESSDERC, page 194-197. IEEE, (2018)Scaling CMOS beyond Si FinFET: an analog/RF perspective., , , , , , , , , and 4 other author(s). ESSDERC, page 158-161. IEEE, (2018)Self-heating-aware CMOS reliability characterization using degradation maps., , , , , , , and . IRPS, page 2. IEEE, (2018)Experimental evidences and simulations of trap generation along a percolation path., , , , , , , , , and . ESSDERC, page 226-229. IEEE, (2015)Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations., , , , , and . IEEE Trans. VLSI Syst., 27 (3): 601-610 (2019)Comphy - A compact-physics framework for unified modeling of BTI., , , , , , , , , and 4 other author(s). Microelectronics Reliability, (2018)CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)