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Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag., , , , , , , , , and 4 other author(s). ISSCC, page 312-314. IEEE, (2012)Self-heating-aware CMOS reliability characterization using degradation maps., , , , , , , and . IRPS, page 2. IEEE, (2018)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectronics Reliability, (2018)Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the VG, VD bias space., , , , , , and . IRPS, page 1-6. IEEE, (2019)Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects., , , , , and . IRPS, page 1-6. IEEE, (2019)Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs., , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs., , , , , , , , , and 1 other author(s). IRPS, page 1-7. IEEE, (2019)Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space., , , , and . IRPS, page 5. IEEE, (2018)Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors., , , , , , , and . ESSDERC, page 302-304. IEEE, (2014)