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Disambiguation of "Makarov, Alexander"

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Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

, , , , , , , , , and . IRPS, page 1-7. IEEE, (2019)

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Alexander Verl

On the Dynamics and Emergency Stop Behavior of Cable-Driven Parallel Robots, , and . ROMANSY 21 - Robot Design, Dynamics and Control, volume 569 of CISM International Centre for Mechanical Sciences, page 431--438. Switzerland, Springer Verlag and Springer International Publishing, (2016)

Alexander Grundler University of Stuttgart

Zuverlässigkeitsnachweis von Systemen durch Komponenten- und Systemtests unter Berücksichtigung von Vorkenntnissen. Universität Stuttgart, Stuttgart, Dissertation, (2024)

Dr. rer. nat. Alexander Schlaich University of Stuttgart

Supporting Information: Chemical Potential Differences in Nanoscopic Teflon/Kapton Capillaries, and . Software, (2024)Related to: Artemov, V.; Frank, L.; Doronin, R.; Stärk, P.; Schlaich, A.; Andreev, A.; Leisner, T.; Radenovic, A.; Kiselev, A. The Three-Phase Contact Potential Difference Modulates the Water Surface Charge. J. Phys. Chem. Lett. 2023, 14, 4796-4802. doi: 10.1021/acs.jpclett.3c00479.

Dr. rer. nat. Alexander Jaust University of Stuttgart

preCICE Distribution Version v2404.0, , , , , , , , , and 14 other author(s). Software, (2024)

Alexander Schuster University of Stuttgart

 

Other publications of authors with the same name

Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins., , , and . LSSC, volume 7116 of Lecture Notes in Computer Science, page 630-637. Springer, (2011)The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register., , , and . ESSDERC, page 311-314. IEEE, (2016)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs., , , , , , , , , and 1 other author(s). IRPS, page 1-7. IEEE, (2019)Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations., , and . NMA, volume 6046 of Lecture Notes in Computer Science, page 87-94. Springer, (2010)SOT-MRAM based on 1Transistor-1MTJ-cell structure., , , and . NVMTS, page 1-4. IEEE, (2015)Magnetic tunnel junctions for future memory and logic-in-memory applications., , , and . MIXDES, page 30-33. IEEE, (2014)A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs., , , , , , , and . ESSDERC, page 428-431. IEEE, (2016)Emerging memory technologies: Trends, challenges, and modeling methods., , and . Microelectronics Reliability, 52 (4): 628-634 (2012)Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM., , , , , , and . ESSDERC, page 146-149. IEEE, (2019)