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A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

P. Sharma, S. Tyaginov, S. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, and T. Grasser. ESSDERC, page 428-431. IEEE, (2016)

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Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements.F. Crupi, M. Alioto, J. Franco, P. Magnone, M. Togo, N. Horiguchi, and G. Groeseneken. IEEE Trans. on Circuits and Systems, 59-II (7): 439-442 (2012)Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology.P. Weckx, B. Kaczer, C. Chen, J. Franco, E. Bury, K. Chanda, J. Watt, P. Roussel, F. Catthoor, and G. Groeseneken. IRPS, page 3. IEEE, (2015)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.J. Franco, B. Kaczer, J. Mitard, M. Toledano-Luque, F. Crupi, G. Eneman, P. Rousse, T. Grasser, M. Cho, T. Kauerauf and 6 other author(s). ICICDT, page 1-4. IEEE, (2012)Experimental analysis of buried SiGe pMOSFETs from the perspective of aggressive voltage scaling.F. Crupi, M. Alioto, J. Franco, P. Magnone, B. Kaczer, G. Groeseneken, J. Mitard, L. Witters, and T. Hoffmann. ISCAS, page 2249-2252. IEEE, (2011)A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.P. Sharma, S. Tyaginov, S. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, and T. Grasser. ESSDERC, page 428-431. IEEE, (2016)Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.Z. Wu, J. Franco, D. Claes, G. Rzepa, P. Roussel, N. Collaert, G. Groeseneken, D. Linten, T. Grasser, and B. Kaczer. IRPS, page 1-7. IEEE, (2019)Beyond-Si materials and devices for more Moore and more than Moore applications.N. Collaert, A. Alian, H. Arimura, G. Boccardi, G. Eneman, J. Franco, T. Ivanov, D. Lin, J. Mitard, S. Ramesh and 16 other author(s). ICICDT, page 1-5. IEEE, (2016)BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic.J. Franco, S. Graziano, B. Kaczer, F. Crupi, L. Ragnarsson, T. Grasser, and G. Groeseneken. Microelectron. Reliab., 52 (9-10): 1932-1935 (2012)Defect-centric perspective of time-dependent BTI variability.M. Toledano-Luque, B. Kaczer, J. Franco, P. Roussel, T. Grasser, and G. Groeseneken. Microelectronics Reliability, 52 (9-10): 1883-1890 (2012)Comparison of NBTI aging on adder architectures and ring oscillators in the downscaling technology nodes.H. Kükner, P. Weckx, S. Morrison, J. Franco, M. Toledano-Luque, M. Cho, P. Raghavan, B. Kaczer, D. Jang, K. Miyaguchi and 5 other author(s). Microprocessors and Microsystems - Embedded Hardware Design, 39 (8): 1039-1051 (2015)

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A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

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Disambiguation of "Franco, Jacopo"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

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A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.