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Disambiguation of "Kaczer, Ben"

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A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.

, , , , , , , and . ESSDERC, page 428-431. IEEE, (2016)

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Achim Benz University of Stuttgart

Sara Bender University of Stuttgart

Tobias Bens University of Stuttgart

Maximilian Benn University of Stuttgart

T. Benz

 

Other publications of authors with the same name

FinFET and MOSFET preliminary comparison of gate oxide reliability., , , , , and . Microelectronics Reliability, 46 (9-11): 1608-1611 (2006)Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements., , , , and . IEEE Trans. VLSI Syst., 19 (9): 1569-1582 (2011)A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectronics Reliability, (2018)New Insights into the Imprint Effect in FE-HfO2 and its Recovery., , , , , , , , , and 3 other author(s). IRPS, page 1-7. IEEE, (2019)Investigation of the endurance of FE-HfO2 devices by means of TDDB studies., , , , , , , , , and . IRPS, page 6. IEEE, (2018)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling., , , , , , , , and . IEEE Trans. VLSI Syst., 20 (8): 1487-1495 (2012)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants., , , , , , , , , and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI., , , , , and . IRPS, page 3. IEEE, (2015)Off-state stress degradation mechanism on advanced p-MOSFETs., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)