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Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

M. Vandemaele, B. Kaczer, S. Tyaginov, Z. Stanojevic, A. Makarov, A. Chasin, E. Bury, H. Mertens, D. Linten, and G. Groeseneken. IRPS, page 1-7. IEEE, (2019)

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Stanislav Shevchuk University of Stuttgart

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Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.A. Makarov, B. Kaczer, P. Roussel, A. Chasin, A. Grill, M. Vandemaele, G. Hellings, A. El-Sayed, T. Grasser, D. Linten and 1 other author(s). IRPS, page 1-7. IEEE, (2019)Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.A. Makarov, D. Linten, S. Tyaginov, B. Kaczer, P. Roussel, A. Chasin, M. Vandemaele, G. Hellings, A. El-Sayed, M. Jech and 1 other author(s). ESSDERC, page 262-265. IEEE, (2019)Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.M. Vandemaele, B. Kaczer, S. Tyaginov, Z. Stanojevic, A. Makarov, A. Chasin, E. Bury, H. Mertens, D. Linten, and G. Groeseneken. IRPS, page 1-7. IEEE, (2019)Origins and implications of increased channel hot carrier variability in nFinFETs.B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. Tyaginov, M. Bina, Y. Wimmer, L. Procel, L. Trojman and 11 other author(s). IRPS, page 3. IEEE, (2015)A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.P. Sharma, S. Tyaginov, S. Rauch, J. Franco, B. Kaczer, A. Makarov, M. Vexler, and T. Grasser. ESSDERC, page 428-431. IEEE, (2016)Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs.P. Sharma, S. Tyaginov, Y. Wimmer, F. Rudolf, K. Rupp, H. Enichlmair, J. Park, H. Ceric, and T. Grasser. Microelectronics Reliability, 55 (9-10): 1427-1432 (2015)An analytical approach for physical modeling of hot-carrier induced degradation.S. Tyaginov, I. Starkov, H. Enichlmair, C. Jungemann, J. Park, E. Seebacher, R. de Orio, H. Ceric, and T. Grasser. Microelectronics Reliability, 51 (9-11): 1525-1529 (2011)Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate.S. Tyaginov, V. Sverdlov, I. Starkov, W. Gös, and T. Grasser. Microelectronics Reliability, 49 (9-11): 998-1002 (2009)Interface traps density-of-states as a vital component for hot-carrier degradation modeling.S. Tyaginov, I. Starkov, O. Triebl, J. Cervenka, C. Jungemann, S. Carniello, J. Park, H. Enichlmair, M. Karner, C. Kernstock and 4 other author(s). Microelectronics Reliability, 50 (9-11): 1267-1272 (2010)

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Disambiguation of "Tyaginov, Stanislav"

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Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

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Stanislav Shevchuk University of Stuttgart

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PUMA

Disambiguation of "Tyaginov, Stanislav"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.

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Stanislav Shevchuk University of Stuttgart

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Disambiguation

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Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs.