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Origins and implications of increased channel hot carrier variability in nFinFETs.

B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. Tyaginov, M. Bina, Y. Wimmer, L. Procel, L. Trojman, F. Crupi, G. Pitner, V. Putcha, P. Weckx, E. Bury, Z. Ji, A. Keersgieter, T. Chiarella, N. Horiguchi, G. Groeseneken, and A. Thean. IRPS, page 3. IEEE, (2015)

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Jun. -Prof. Dr. Philippe Grönquist University of Stuttgart

J. K\"astner

J. Schwarz

J. K\"astner

J Walter

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Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI.A. Chaudhary, B. Kaczer, P. Roussel, T. Chiarella, N. Horiguchi, and S. Mahapatra. IRPS, page 3. IEEE, (2015)Impact of time-dependent variability on the yield and performance of 6T SRAM cells in an advanced HK/MG technology.P. Weckx, B. Kaczer, P. Roussel, F. Catthoor, and G. Groeseneken. ICICDT, page 1-4. IEEE, (2015)Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology.P. Weckx, B. Kaczer, C. Chen, J. Franco, E. Bury, K. Chanda, J. Watt, P. Roussel, F. Catthoor, and G. Groeseneken. IRPS, page 3. IEEE, (2015)Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.Z. Wu, J. Franco, D. Claes, G. Rzepa, P. Roussel, N. Collaert, G. Groeseneken, D. Linten, T. Grasser, and B. Kaczer. IRPS, page 1-7. IEEE, (2019)New methodology for modelling MOL TDDB coping with variability.P. Roussel, A. Chasin, S. Demuynck, N. Horiguchi, D. Linten, and A. Mocuta. IRPS, page 3. IEEE, (2018)NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.J. Franco, B. Kaczer, P. Roussel, E. Bury, H. Mertens, R. Ritzenthaler, T. Grasser, N. Horiguchi, A. Thean, and G. Groeseneken. IRPS, page 2. IEEE, (2015)Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown.B. O'Sullivan, S. Beek, P. Roussel, S. Rao, W. Kim, S. Couet, J. Swerts, F. Yasin, D. Crotti, D. Linten and 1 other author(s). IRPS, page 5-1. IEEE, (2018)Characterization and simulation methodology for time-dependent variability in advanced technologies.P. Weckx, B. Kaczer, P. Raghavan, J. Franco, M. Simicic, P. Roussel, D. Linten, A. Thean, D. Verkest, F. Catthoor and 1 other author(s). CICC, page 1-8. IEEE, (2015)Origins and implications of increased channel hot carrier variability in nFinFETs.B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. Tyaginov, M. Bina, Y. Wimmer, L. Procel, L. Trojman and 11 other author(s). IRPS, page 3. IEEE, (2015)

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Disambiguation of "Roussel, Philippe J."

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Origins and implications of increased channel hot carrier variability in nFinFETs.

Please choose a person to relate this publication to

Jun. -Prof. Dr. Philippe Grönquist University of Stuttgart

J. K\"astner

J. Schwarz

J. K\"astner

J Walter

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Roussel, Philippe J."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Origins and implications of increased channel hot carrier variability in nFinFETs.

Please choose a person to relate this publication to

Jun. -Prof. Dr. Philippe Grönquist University of Stuttgart

J. K\"astner

J. Schwarz

J. K\"astner

J Walter

Other publications of authors with the same name

Disambiguation

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community post
history of this post
URL
DOI
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Origins and implications of increased channel hot carrier variability in nFinFETs.