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Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown.

, , , , , , , , , , and . IRPS, page 5-1. IEEE, (2018)

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Experimental extraction of BEOL composite equivalent thermal conductivities for application in self-heating simulations., , , and . ESSDERC, page 186-189. IEEE, (2018)Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the VG, VD bias space., , , , , , and . IRPS, page 1-6. IEEE, (2019)Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit., , , , , , and . ESSDERC, page 146-149. IEEE, (2018)SOT-MRAM 300mm integration for low power and ultrafast embedded memories., , , , , , , , , and 9 other author(s). CoRR, (2018)Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions., , , , , , , , and . IRPS, page 4. IEEE, (2015)SOT-MRAM 300MM Integration for Low Power and Ultrafast Embedded Memories., , , , , , , , , and 9 other author(s). VLSI Circuits, page 81-82. IEEE, (2018)Extended RVS characterisation of STT-MRAM devices: Enabling detection of AP/P switching and breakdown., , , , , , , , , and 1 other author(s). IRPS, page 5-1. IEEE, (2018)