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Disambiguation of "Schram, Tom"

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Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

, , , , , , , , , , , , , , , , , and . ESSDERC, page 190-193. IEEE, (2013)

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Tom Ott University of Stuttgart

Tom Tenzer University of Stuttgart

Katharine Tomsich University of Stuttgart

Sandra Toms University of Stuttgart

Dr. phil. André Tomalka University of Stuttgart

 

Other publications of authors with the same name

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks., , , , , , , , , and 5 other author(s). Microelectronics Reliability, 47 (4-5): 518-520 (2007)Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey., , , , , , , , , and . Microelectronics Reliability, 45 (5-6): 786-789 (2005)Towards high performance sub-10nm finW bulk FinFET technology., , , , , , , , , and 10 other author(s). ESSDERC, page 131-134. IEEE, (2016)WS2 transistors on 300 mm wafers with BEOL compatibility., , , , , , , , , and 8 other author(s). ESSDERC, page 212-215. IEEE, (2017)Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs., , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors., , , , , , , , , and . Microelectronics Reliability, 45 (5-6): 779-782 (2005)I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration., , , , , , , , , and 2 other author(s). ICICDT, page 1-4. IEEE, (2015)Impact of Off State Stress on advanced high-K metal gate NMOSFETs., , , , , , and . ESSDERC, page 365-368. IEEE, (2014)Off-state stress degradation mechanism on advanced p-MOSFETs., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Assessment of SiGe quantum well transistors for DRAM peripheral applications., , , , , , , , , and 1 other author(s). ICICDT, page 1-4. IEEE, (2015)