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Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey.

, , , , , , , , , and . Microelectronics Reliability, 45 (5-6): 786-789 (2005)

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Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance., , , , , , and . Microelectronics Reliability, 45 (5-6): 794-797 (2005)Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors., , , , , , , , , and . Microelectronics Reliability, 45 (5-6): 779-782 (2005)Silicon LEDs in FinFET technology., , , , , and . ESSDERC, page 274-277. IEEE, (2014)Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks., , , , , , , , , and 2 other author(s). ESSDERC, page 242-245. IEEE, (2012)Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey., , , , , , , , , and . Microelectronics Reliability, 45 (5-6): 786-789 (2005)Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications., , , , , , , , , and 6 other author(s). ICICDT, page 1-4. IEEE, (2012)Towards high performance sub-10nm finW bulk FinFET technology., , , , , , , , , and 10 other author(s). ESSDERC, page 131-134. IEEE, (2016)