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Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes., , , , , , , , and . Microelectronics Reliability, 54 (9-10): 2196-2199 (2014)Transient voltage overshoot in TLP testing - Real or artifact?, , , , , and . Microelectronics Reliability, 47 (7): 1016-1024 (2007)Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability., , , and . Microelectronics Reliability, 47 (4-5): 559-566 (2007)NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures., , , , , , , , , and . IRPS, page 2. IEEE, (2015)ESD protection diodes in optical interposer technology., , , , , , and . ICICDT, page 1-4. IEEE, (2015)Degradation analysis of datapath logic subblocks under NBTI aging in FinFET technology., , , , , , , , , and . ISQED, page 473-479. IEEE, (2014)Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps., , , , , , and . IRPS, page 5. IEEE, (2018)Significance of the failure criterion on transmission line pulse testing., , , , and . Microelectronics Reliability, 42 (6): 901-907 (2002)Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions., , , , , , , , and . Microelectronics Reliability, 46 (5-6): 702-712 (2006)Understanding the Basic Advantages of Bulk FinFETs for Sub- and Near-Threshold Logic Circuits From Device Measurements., , , , , , and . IEEE Trans. on Circuits and Systems, 59-II (7): 439-442 (2012)