Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

M. Aoulaiche, E. Simoen, R. Ritzenthaler, T. Schram, H. Arimura, M. Cho, T. Kauerauf, G. Groeseneken, N. Horiguchi, A. Thean, A. Federico, F. Crupi, A. Spessot, C. Caillat, P. Fazan, H. Na, Y. Son, and K. Noh. ESSDERC, page 190-193. IEEE, (2013)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Aaron Krämer University of Stuttgart

Aaron Münzer University of Stuttgart

Aaron Bryant University of Stuttgart

Aaron Götzelmann University of Stuttgart

Other publications of authors with the same name

Dimensioning for power and performance under 10nm: The limits of FinFETs scaling.M. Bardon, P. Schuddinck, P. Raghavan, D. Jang, D. Yakimets, A. Mercha, D. Verkest, and A. Thean. ICICDT, page 1-4. IEEE, (2015)Modeling FinFET metal gate stack resistance for 14nm node and beyond.K. Miyaguchi, B. Parvais, L. Ragnarsson, P. Wambacq, P. Raghavan, A. Mercha, A. Mocuta, D. Verkest, and A. Thean. ICICDT, page 1-4. IEEE, (2015)Active-lite interposer for 2.5 & 3D integration.G. Hellings, M. Scholz, M. Detalle, D. Velenis, M. de Potter de ten Broeck, C. Neve, Y. Li, S. Huylenbroek, S. Chen, E. Marinissen and 5 other author(s). VLSIC, page 222-. IEEE, (2015)Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs.T. Romeo, L. Pantisano, E. Simoen, R. Krom, M. Togo, N. Horiguchi, J. Mitard, A. Thean, G. Groeseneken, C. Claeys and 1 other author(s). ESSDERC, page 330-333. IEEE, (2012)A digital intensive circuit for low-frequency noise monitoring in 28nm CMOS.B. Parvais, P. Wambacq, A. Mercha, D. Verkest, A. Thean, K. Sawada, K. Nomoto, T. Oishi, and H. Ammo. A-SSCC, page 1-4. IEEE, (2015)Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors.D. Verreck, A. Verhulst, B. Soree, N. Collaert, A. Mocuta, A. Thean, and G. Groeseneken. ESSDERC, page 412-415. IEEE, (2016)System-level assessment and area evaluation of Spin Wave logic circuits.O. Zografos, P. Raghavan, L. Amarù, B. Soree, R. Lauwereins, I. Radu, D. Verkest, and A. Thean. NANOARCH, page 25-30. IEEE Computer Society/ACM, (2014)Area and routing efficiency of SWD circuits compared to advanced CMOS.O. Zografos, P. Raghavan, Y. Sherazi, A. Vaysset, F. Ciubatoru, B. Soree, R. Lauwereins, I. Radu, and A. Thean. ICICDT, page 1-4. IEEE, (2015)Design Technology co-optimization for N10.J. Ryckaert, P. Raghavan, R. Baert, M. Bardon, M. Dusa, A. Mallik, S. Sakhare, B. Vandewalle, P. Wambacq, B. Chava and 18 other author(s). CICC, page 1-8. IEEE, (2014)Holisitic device exploration for 7nm node.P. Raghavan, M. Bardon, D. Jang, P. Schuddinck, D. Yakimets, J. Ryckaert, A. Mercha, N. Horiguchi, N. Collaert, A. Mocuta and 5 other author(s). CICC, page 1-5. IEEE, (2015)

PUMA

Disambiguation of "Thean, Aaron"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

Please choose a person to relate this publication to

Aaron Krämer University of Stuttgart

Aaron Münzer University of Stuttgart

Aaron Bryant University of Stuttgart

Aaron Götzelmann University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Thean, Aaron"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.

Please choose a person to relate this publication to

Aaron Krämer University of Stuttgart

Aaron Münzer University of Stuttgart

Aaron Bryant University of Stuttgart

Aaron Götzelmann University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors.