Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

No persons found for author name Barraud, Sylvain
add a person with the name Barraud, Sylvain
 

Other publications of authors with the same name

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet)., , , , , , , , , and . IRPS, page 6. IEEE, (2018)Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model., , , , , , , and . ESSDERC, page 210-213. IEEE, (2015)Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs., , , , , and . ESSDERC, page 142-145. IEEE, (2016)Drain current model for short-channel triple gate junctionless nanowire transistors., , , , , , , and . Microelectronics Reliability, (2016)Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities., , , , , , , , , and 6 other author(s). ESSDERC, page 121-124. IEEE, (2012)Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs., , , , , , and . ESSDERC, page 73-76. IEEE, (2012)SOI CMOS technology for quantum information processing., , , , , , , , , and 5 other author(s). ICICDT, page 1-4. IEEE, (2017)Back-gate effects and detailed characterization of junctionless transistor., , , , , , , and . ESSDERC, page 282-285. IEEE, (2015)Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs., , , , , , and . ESSDERC, page 300-303. IEEE, (2013)Analog performance of strained SOI nanowires down to 10K., , , , , , and . ESSDERC, page 222-225. IEEE, (2016)