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Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs., , , and . Microelectronics Reliability, 53 (6): 848-855 (2013)Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation., , , , and . Microelectronics Journal, 39 (12): 1663-1670 (2008)An explicit multi-exponential model for semiconductor junctions with series and shunt resistances., , , , , and . Microelectronics Reliability, 51 (12): 2044-2048 (2011)Design of Operational Transconductance Amplifiers with Improved Gain by Using Graded-Channel SOI nMOSFETs., , , , and . SBCCI, page 26-. IEEE Computer Society, (2003)Evaluation of graded-channel SOI MOSFET operation at high temperatures., , and . Microelectronics Journal, 37 (7): 601-607 (2006)An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices., , , , and . Microelectronics Reliability, 52 (3): 519-524 (2012)Drain current model for short-channel triple gate junctionless nanowire transistors., , , , , , , and . Microelectronics Reliability, (2016)Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS., , , and . Microelectronics Journal, 37 (1): 31-37 (2006)Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors., , , , , , , and . Microelectronics Reliability, (2016)FOSS EKV2.6 Verilog-A Compact MOSFET Model., , , , , , , , , and 12 other author(s). ESSDERC, page 190-193. IEEE, (2019)