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Disambiguation of "Reimbold, Gilles"

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Analog performance of strained SOI nanowires down to 10K.

, , , , , , and . ESSDERC, page 222-225. IEEE, (2016)

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Other publications of authors with the same name

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology., , , , , , , , , and . IRPS, page 2. IEEE, (2015)Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption., , , , , , , , , and 9 other author(s). ESSDERC, page 286-289. IEEE, (2012)Physically-based extraction methodology for accurate MOSFET degradation assessment., , , , , , and . Microelectronics Reliability, 55 (9-10): 1417-1421 (2015)Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs., , , , , , and . ESSDERC, page 73-76. IEEE, (2012)Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs., , , , , , and . ESSDERC, page 300-303. IEEE, (2013)Analog performance of strained SOI nanowires down to 10K., , , , , , and . ESSDERC, page 222-225. IEEE, (2016)Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks., , , , , and . Microelectronics Reliability, 47 (4-5): 489-496 (2007)A new method for quickly evaluating reversible and permanent components of the BTI degradation., , , , , , , and . IRPS, page 6-1. IEEE, (2018)Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes., , , , , , , , , and 1 other author(s). ESSDERC, page 226-229. IEEE, (2014)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , and 2 other author(s). ESSDERC, page 246-249. IEEE, (2015)