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FDSOI vs FinFET: differentiating device features for ultra low power & IoT applications.. ICICDT, page 1-3. IEEE, (2017)Static and dynamic power management in 14nm FDSOI technology., , , and . ICICDT, page 1-4. IEEE, (2015)Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below., , , , , , , , , and . J. Low Power Electronics, 8 (1): 125-132 (2012)Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devices., , , , , , , , , and 2 other author(s). ESSDERC, page 246-249. IEEE, (2015)Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs., , , , , , , , , and 17 other author(s). ESSDERC, page 106-109. IEEE, (2014)Variability of planar Ultra-Thin Body and Buried oxide (UTBB) FDSOI MOSFETs., , , , , and . ICICDT, page 1-4. IEEE, (2014)28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications., , , , , , , , , and 11 other author(s). VLSI Circuits, page 1-2. IEEE, (2016)28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications., , , , , and . ESSCIRC, page 7-10. IEEE, (2019)