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Guidelines for intermediate back end of line (BEOL) for 3D sequential integration., , , , , , , , , and 18 other author(s). ESSDERC, page 252-255. IEEE, (2017)FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding., , , , and . Microelectronics Reliability, 47 (2-3): 295-301 (2007)New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges., , , , and . Microelectronics Reliability, (2018)Investigation of NBTI Dynamic Behavior with Ultra-Fast Measurement., , , and . IRPS, page 1-6. IEEE, (2019)Key parameters driving transistor degradation in advanced strained SiGe channels., , , , , , , and . IRPS, page 4-1. IEEE, (2018)Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes., , , , , and . Microelectronics Reliability, (2016)Characterization of Low Drop-Out during ageing and design for yield., , , , , , and . Microelectronics Reliability, (2017)Modeling self-heating effects in advanced CMOS nodes., , , , , and . IRPS, page 3-1. IEEE, (2018)A new method for quickly evaluating reversible and permanent components of the BTI degradation., , , , , , , and . IRPS, page 6-1. IEEE, (2018)Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology., , , , and . IRPS, page 3. IEEE, (2015)