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Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides., , , and . Microelectronics Reliability, 44 (1): 65-77 (2004)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions., , , , , and . Microelectronics Reliability, 41 (9-10): 1295-1300 (2001)Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies., , , , and . Microelectronics Reliability, 43 (8): 1241-1246 (2003)A thorough investigation of MOSFETs NBTI degradation., , , , , , and . Microelectronics Reliability, 45 (1): 83-98 (2005)Guest Editorial., and . Microelectronics Reliability, 43 (8): 1173 (2003)Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides., , , and . Microelectronics Reliability, 41 (7): 1035-1039 (2001)Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation., , , , and . Microelectronics Reliability, 50 (9-11): 1259-1262 (2010)Gate oxide Reliability assessment optimization., , , , , and . Microelectronics Reliability, 42 (9-11): 1505-1508 (2002)On the role of holes in oxide breakdown mechanism in inverted nMOSFETs., , , , , , , and . Microelectronics Reliability, 43 (8): 1199-1202 (2003)Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements., , , , , , , and . Microelectronics Reliability, 47 (4-5): 567-572 (2007)