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Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2019)A new method for quickly evaluating reversible and permanent components of the BTI degradation., , , , , , , and . IRPS, page 6-1. IEEE, (2018)Study of forward AC stress degradation of GaN-on-Si Schottky diodes., , , , , , and . Microelectronics Reliability, (2018)A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT., , , , , , , , and . IRPS, page 4. IEEE, (2018)A disruptive technology for thermal to electrical energy conversion., , , , , , , , , and 2 other author(s). Microelectronics Journal, 45 (5): 554-558 (2014)Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology., , , , , , and . IRPS, page 1-5. IEEE, (2019)Performance & reliability of 3D architectures (πfet, Finfet, Ωfet)., , , , , , , , , and . IRPS, page 6. IEEE, (2018)Performance Improvement on HfO2-Based 1T Ferroelectric NVM by Electrical Preconditioning., , , , , , , , and . IRPS, page 1-4. IEEE, (2019)