Author of the publication

Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology.

, , , , , , and . IRPS, page 1-5. IEEE, (2019)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Performance and reliability of strained SOI transistors for advanced planar FDSOI technology., , , , , , , , , and . IRPS, page 2. IEEE, (2015)Process Optimization for HCI Improvement in I/O Analog Devices., , , , , , , and . IRPS, page 1-6. IEEE, (2019)AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment., , , , , and . IRPS, page 4. IEEE, (2018)Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment., , , , , , , and . IRPS, page 5. IEEE, (2015)Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies., , , , , and . Microelectronics Reliability, 51 (9-11): 1508-1514 (2011)Process dependence of BTI reliability in advanced HK MG stacks., , , , , , , and . Microelectronics Reliability, 49 (9-11): 982-988 (2009)Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation., , , , and . Microelectronics Reliability, 50 (9-11): 1259-1262 (2010)Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology., , , , , , and . IRPS, page 1-5. IEEE, (2019)Modeling self-heating effects in advanced CMOS nodes., , , , , and . IRPS, page 3-1. IEEE, (2018)A new method for quickly evaluating reversible and permanent components of the BTI degradation., , , , , , , and . IRPS, page 6-1. IEEE, (2018)