Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).

A. Laurent, X. Garros, S. Barraud, J. Pelloux-Prayer, M. Casse, F. Gaillard, X. Federspiel, D. Roy, E. Vincent, and G. Ghibaudo. IRPS, page 6. IEEE, (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

No persons found for author name Ghibaudo, Gérard

add a person with the name Ghibaudo, Gérard

Other publications of authors with the same name

Characterization Methodology for MOSFET Local Systematic Variability in Presence of Statistical Variability.O. Piliado, G. Castaneda, A. Juge, and G. Ghibaudo. J. Low Power Electronics, 10 (1): 127-136 (2014)Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses.L. Negre, D. Roy, F. Cacho, P. Scheer, S. Jan, S. Boret, D. Gloria, and G. Ghibaudo. J. Solid-State Circuits, 47 (5): 1075-1083 (2012)Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs.E. Ioannidis, S. Haendler, C. Theodorou, N. Planes, C. Dimitriadis, and G. Ghibaudo. ESSDERC, page 214-217. IEEE, (2014)Noise-induced dynamic variability in nano-scale CMOS SRAM cells.C. Theodorou, M. Fadlallah, X. Garros, C. Dimitriadis, and G. Ghibaudo. ESSDERC, page 256-259. IEEE, (2016)Electrical noise and RTS fluctuations in advanced CMOS devices.G. Ghibaudo, and T. Boutchacha. Microelectronics Reliability, 42 (4-5): 573-582 (2002)Study of forward AC stress degradation of GaN-on-Si Schottky diodes.T. Lorin, W. Vandendaele, R. Gwoziecki, C. Gillot, J. Biscarrat, G. Ghibaudo, and F. Gaillard. Microelectronics Reliability, (2018)Body effect induced wear-out acceleration in ultra-thin oxides.S. Bruyère, D. Roy, E. Robilliart, E. Vincent, and G. Ghibaudo. Microelectronics Reliability, 41 (7): 1031-1034 (2001)Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.M. Fadlallah, C. Petit, A. Meinertzhagen, G. Ghibaudo, M. Bidaud, O. Simonetti, and F. Guyader. Microelectronics Reliability, 43 (9-11): 1433-1438 (2003)Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment.A. Bezza, M. Rafik, D. Roy, X. Federspiel, P. Mora, C. Diouf, V. Huard, and G. Ghibaudo. IRPS, page 5. IEEE, (2015)Accurate determination of flat band voltage in advanced MOS structure.C. Leroux, G. Ghibaudo, and G. Reimbold. Microelectronics Reliability, 47 (4-5): 660-664 (2007)

PUMA

Disambiguation of "Ghibaudo, Gérard"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Ghibaudo, Gérard"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet).