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Body effect induced wear-out acceleration in ultra-thin oxides.

, , , , and . Microelectronics Reliability, 41 (7): 1031-1034 (2001)

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Grunn2019 at SemEval-2019 Task 5: Shared Task on Multilingual Detection of Hate., , , and . SemEval@NAACL-HLT, page 391-395. Association for Computational Linguistics, (2019)Detection of Burned Areas in Southern African Savannahs Using Time Series of C-Band Sentinel-1 Data., , , , and . IGARSS, page 5337-5339. IEEE, (2018)Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions., , , , , and . Microelectronics Reliability, 41 (9-10): 1295-1300 (2001)Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses., , , , , , , and . J. Solid-State Circuits, 47 (5): 1075-1083 (2012)Body effect induced wear-out acceleration in ultra-thin oxides., , , , and . Microelectronics Reliability, 41 (7): 1031-1034 (2001)Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment., , , , , , , and . IRPS, page 5. IEEE, (2015)Physically-based extraction methodology for accurate MOSFET degradation assessment., , , , , , and . Microelectronics Reliability, 55 (9-10): 1417-1421 (2015)Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement., , , and . Microelectronics Reliability, 42 (9-11): 1497-1500 (2002)New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges., , , , and . Microelectronics Reliability, (2018)Designing in reliability in advanced CMOS technologies., , , , , , , , and . Microelectronics Reliability, 46 (9-11): 1464-1471 (2006)