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apl. Prof. Dr. Thomas Sottmann University of Stuttgart

Data for 'Adjustable polystyrene nanoparticle templates for the production of mesoporous foams and ZnO inverse opals', , , , , and . Dataset, (2024)Related to: Abitaev, Karina; Qawasmi, Yaseen; Atanasova, Petia; Dargel, Carina; Bill, Joachim; Hellweg, Thomas; Sottmann, Thomas: Adjustable polystyrene nanoparticle templates for the production of mesoporous foams and ZnO inverse opals. In: Colloid and Polymer Science 299 (2021), 243-258. doi: 10.1007/s00396-020-04791-5.
 

Other publications of authors with the same name

Active compensation of supply noise for a 5-GHz VCO in 45-nm CMOS SOI technology., and . ISCAS, page 2617-2620. IEEE, (2008)A highly digital 0.5-to-4Gb/s 1.9mW/Gb/s serial-link transceiver using current-recycling in 90nm CMOS., , , , , , and . ISSCC, page 152-154. IEEE, (2011)A 3.6pJ/b 56Gb/s 4-PAM receiver with 6-Bit TI-SAR ADC and quarter-rate speculative 2-tap DFE in 32 nm CMOS., , , , , , , , , and 2 other author(s). ESSCIRC, page 148-151. IEEE, (2015)High-speed link with trellis-coded modulation and Reed-Solomon coding., , , , , and . CSCN, page 231-236. IEEE, (2016)A 161mW 56Gb/s ADC-Based Discrete Multitone Wireline Receiver Data-Path in 14nm FinFET., , , , , , , , , and 5 other author(s). ISSCC, page 476-478. IEEE, (2019)A 28Gb/s 4-tap FFE/15-tap DFE serial link transceiver in 32nm SOI CMOS technology., , , , , , , , , and 11 other author(s). ISSCC, page 324-326. IEEE, (2012)A 60-Gb/s 1.9-pJ/bit NRZ Optical Receiver With Low-Latency Digital CDR in 14-nm CMOS FinFET., , , , , , , , , and 7 other author(s). J. Solid-State Circuits, 53 (4): 1227-1237 (2018)A 64-Gb/s 1.4-pJ/b NRZ Optical Receiver Data-Path in 14-nm CMOS FinFET., , , , , , , , , and 7 other author(s). J. Solid-State Circuits, 52 (12): 3458-3473 (2017)23.6 A 30Gb/s 0.8pJ/b 14nm FinFET receiver data-path., , , , , , , , , and 1 other author(s). ISSCC, page 408-409. IEEE, (2016)A 10 Gb/s 8-Tap 6b 2-PAM/4-PAM Tomlinson-Harashima Precoding Transmitter for Future Memory-Link Applications in 22-nm SOI CMOS., , , , , , , , and . J. Solid-State Circuits, 48 (12): 3268-3284 (2013)