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Tzu-Ying Chen University of Stuttgart

Replication Data for: Structural development of a novel punctually supported timber building system for multi-storey construction : Experimental Data: Tension Tests of the Edge Connection, , , , , und . Dataset, (2024)Related to: Anna Krtschil, Luis Orozco, Simon Bechert, Hans Jakob Wagner, Felix Amtsberg, Tzu-Ying Chen, Anand Shah, Achim Menges, Jan Knippers, "Structural development of a novel punctually supported timber building system for multi-storey construction", Journal of Building Engineering, Volume 58, 2022, pages 104972. doi: 10.1016/j.jobe.2022.104972.
 

Weitere Publikationen von Autoren mit dem selben Namen

A Full E-Beam 0.25 um Bipolar Technology With Sub-25 Ps ECL Gate Delay, , , , , , , , , und 4 andere Autor(en). International Electron Devices Meeting (1991 : Washington, DC), Seite 956-958. Piscataway, New Jersey, IEEE, (1991)Novel In-Situ Doped Polysilicon Emitter Process With Buried Diffusion Source (BDS), , , , , , , und . IEEE Electron Device Letters, 12 (12): 679-681 (Dezember 1991)Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization Technique, , , , , , , , , und 2 andere Autor(en). Proceedings of the 22nd European Solid State Device Research Conference Leuven, 14-17 September 1992, Seite 531-534. Amsterdam, Elsevier, (1992)SPIRIT : A Bipolar/BiCMOS Isolation Technology For High-Performance VLSI, , , , , , , , und . Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, Seite 143-144. Piscataway, New Jersey, IEEE, (1993)SiGe Heterojunction Bipolar Transistors, , , , , , und . (1990)Device design issues for a high-performance technology with Si or SiGe epitaxial base, , , , , , , und . Microelectronic Engineering, 15 (1-4): 11-14 (Oktober 1991)Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology, , , , , , , und . IEEE Transactions on Electron Devices, 38 (2): 378-385 (Februar 1991)Single Crystal Emitter Cap for Epitaxial Si- And SiGe-Base Transistors, , , , , , , , , und . International Electron Devices Meeting (1991 : Washington, DC), Seite 857-860. Piscataway, New Jersey, IEEE, (1991)Self-aligned bipolar npn transistor with 60 nm epitaxial base, , , , , und . Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, Seite 229-232. Piscataway, New Jersey, IEEE, (1989)Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base Transistors, , , , , , , , , und 3 andere Autor(en). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, Seite 297-300. Piscataway, New Jersey, IEEE, (1990)