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SiGe Heterojunction Bipolar Transistors

J. Comfort, G. Patton, J. Burghartz, E. Crabbé, J. Sun, J. Stork, and B. Meyerson. (1990)

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M. Fittingho

Entwicklung einer KI-basierten Reihenfolgestrategie für Hochregallager mit autonomen Fahrzeugen.F. Schloz, T. Kriehn, R. Schulz, and M. Fittingho. (2019)

Entwicklung einer KI-basierten Reihenfolgestrategie für Hochregallager mit autonomen Fahrzeugen.F. Schloz, T. Kriehn, R. Schulz, and M. Fittingho. (2019)Algorithm for situation-dependent adaptation of velocity for shuttle based systems, Proceedings of the Hamburg International Conference of Logistics, Hamburg,T. Kriehn, F. Schloz, R. Schulz, and M. Fittinghoff. (2019)

C. Traut

C. Honold

Johannes Görres University of Stuttgart

New ways of evaluation of damage to wire ropes by combining different non-destructive rope testing methodsR. Eisinger, J. Görres, J. Keller, J. Guter, and R. Schulz. Proceedings of OIPEEC Conference 2024, page 151-164. Organisation Internationale pour l'Etude des Cables (OIPEEC), (April 2024)

Johannes Keller University of Stuttgart

Faserseile – neue Methoden der AblegereifeerkennungJ. Keller, F. Stegmaier, and S. Hecht. 31. Internationale Kranfachtagung 2023 - Digitalisierung, Innovation, Produktsicherheit, 31, page 89-98. Arbeitsgruppe Baumaschinen- und Fördertechnik, Ruhr-Universität Bochum, Selbstverlag der Ruhr-Universität Bochum, (May 2023)Investigation of new criteria for discard detection of fibre ropes for safe operationF. Stegmaier, J. Keller, and R. Schulz. Proceedings of OIPEEC Conference 2024, page 83-99. Organisation Internationale pour l'Etude des Cables (OIPEEC), (April 2024)New ways of evaluation of damage to wire ropes by combining different non-destructive rope testing methodsR. Eisinger, J. Görres, J. Keller, J. Guter, and R. Schulz. Proceedings of OIPEEC Conference 2024, page 151-164. Organisation Internationale pour l'Etude des Cables (OIPEEC), (April 2024)

Other publications of authors with the same name

Device Design Issues for a High-Performance Bipolar Technology with Si Or SiGe Epitaxial BaseJ. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Proceedings of the 21st European Solid State Device Research Conference, - ESSDERC ’91, 16 - 19 September 1991, Montreux, Switzerland, page 11-14. Amsterdam, Elsevier, (1991)Profile Leverage in Self-Aligned Epitaxial Si Or SiGe Base Bipolar TransistorsJ. Comfort, G. Patton, J. Cressler, W. Lee, E. Crabbé, B. Meyerson, J. Sun, J. Stork, P. Lu, J. Burghartz and 6 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 21-24. Piscataway, New Jersey, IEEE, (1990)63-75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar TechnologyG. Patton, J. Comfort, B. Meyerson, E. Crabbé, G. Scilla, E. de Fresart, J. Stork, J. Sun, D. Harame, and J. Burghartz. Digest of Technical Papers : 1990 Symposium on VLSI Technology, page 49-50. Piscataway, New Jersey, IEEE, (1990)Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technologyJ. Burghartz, S. Mader, B. Ginsberg, B. Meyerson, J. Stork, C. Stanis, J. Sun, and M. Polcari. IEEE Transactions on Electron Devices, 38 (2): 378-385 (February 1991)Single Crystal Emitter Cap for Epitaxial Si- And SiGe-Base TransistorsJ. Comfort, E. Crabbé, J. Cressler, W. Lee, J. Sun, J. Malinowski, M. D´Agostino, J. Burghartz, J. Stork, and B. Meyerson. International Electron Devices Meeting (1991 : Washington, DC), page 857-860. Piscataway, New Jersey, IEEE, (1991)Self-aligned bipolar npn transistor with 60 nm epitaxial baseJ. Burghartz, S. Mader, B. Meyerson, B. Ginsberg, J. Stork, and J. Sun. Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 229-232. Piscataway, New Jersey, IEEE, (1989)Device design issues for a high-performance technology with Si or SiGe epitaxial baseJ. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Microelectronic Engineering, 15 (1-4): 11-14 (October 1991)Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization TechniqueJ. Burghartz, J. Warnock, J. Cressler, C. Stanis, R. McIntosh, J. Sun, J. Comfort, J. Stork, K. Jenkins, E. Crabbé and 2 other author(s). Proceedings of the 22nd European Solid State Device Research Conference Leuven, 14-17 September 1992, page 531-534. Amsterdam, Elsevier, (1992)SiGe Heterojunction Bipolar TransistorsJ. Comfort, G. Patton, J. Burghartz, E. Crabbé, J. Sun, J. Stork, and B. Meyerson. (1990)A high performance epitaxial SiGe-base ECL BiCMOS technologyD. Harame, E. Crabbé, J. Cressler, J. Comfort, J. Sun, S. Stiffler, E. Kobeda, J. Burghartz, M. Gilbert, J. Malinowski and 7 other author(s). Technical digest : International Electron Devices Meeting 1992 : San Francisco, CA, December 13 - 16, 1992, page 19-22. Piscataway, New Jersey, IEEE, (1992)

PUMA

Disambiguation of "Stork, Johannes M. C."

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SiGe Heterojunction Bipolar Transistors

Please choose a person to relate this publication to

M. Fittingho

C. Traut

C. Honold

Johannes Görres University of Stuttgart

Johannes Keller University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Stork, Johannes M. C."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML SiGe Heterojunction Bipolar Transistors

Please choose a person to relate this publication to

M. Fittingho

C. Traut

C. Honold

Johannes Görres University of Stuttgart

Johannes Keller University of Stuttgart

Other publications of authors with the same name

Disambiguation

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SiGe Heterojunction Bipolar Transistors