Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Device design issues for a high-performance technology with Si or SiGe epitaxial base

J. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Microelectronic Engineering, 15 (1-4): 11-14 (October 1991)
DOI: 10.1016/0167-9317(91)90172-A

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Univ. -Prof. Dr. James Foster University of Stuttgart

H. Binz

H. Bungartz

H. Binz

Other publications of authors with the same name

Device Design Issues for a High-Performance Bipolar Technology with Si Or SiGe Epitaxial BaseJ. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Proceedings of the 21st European Solid State Device Research Conference, - ESSDERC ’91, 16 - 19 September 1991, Montreux, Switzerland, page 11-14. Amsterdam, Elsevier, (1991)A High Performance 0.25/spl mu/m CMOSG. Shahidi, J. Warnock, A. Acovic, P. Agnello, C. Blair, J. Burghartz, E. Crabbé, J. Cressler, P. Coane, J. Comfort and 17 other author(s). Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, page 93-94. Piscataway, New Jersey, IEEE, (1993)A high performance epitaxial SiGe-base ECL BiCMOS technologyD. Harame, E. Crabbé, J. Cressler, J. Comfort, J. Sun, S. Stiffler, E. Kobeda, J. Burghartz, M. Gilbert, J. Malinowski and 7 other author(s). Technical digest : International Electron Devices Meeting 1992 : San Francisco, CA, December 13 - 16, 1992, page 19-22. Piscataway, New Jersey, IEEE, (1992)Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technologyJ. Burghartz, J. Comfort, G. Patton, B. Meyerson, J. Sun, J. Stork, C. Stanis, G. Scilla, and B. Ginsberg. IEEE Electron Device Letters, 11 (7): 288-290 (July 1990)75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar TransistorsG. Patton, J. Comfort, B. Meyerson, E. Crabbé, G. Scilla, E. de Fresart, J. Stork, J. Sun, D. Harame, and J. Burghartz. IEEE Electron Device Letters, 11 (4): 171-173 (April 1990)Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization TechniqueJ. Burghartz, J. Warnock, J. Cressler, C. Stanis, R. McIntosh, J. Sun, J. Comfort, J. Stork, K. Jenkins, E. Crabbé and 2 other author(s). Proceedings of the 22nd European Solid State Device Research Conference Leuven, 14-17 September 1992, page 531-534. Amsterdam, Elsevier, (1992)SPIRIT : A Bipolar/BiCMOS Isolation Technology For High-Performance VLSIJ. Burghartz, A. Cifuentes, R. McIntosh, C. Stanis, J. Cressler, J. Warnock, J. Sun, J. Comfort, and K. Jenkins. Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, page 143-144. Piscataway, New Jersey, IEEE, (1993)SiGe Heterojunction Bipolar TransistorsJ. Comfort, G. Patton, J. Burghartz, E. Crabbé, J. Sun, J. Stork, and B. Meyerson. (1990)Novel In-Situ Doped Polysilicon Emitter Process With Buried Diffusion Source (BDS)J. Burghartz, A. Megdanis, J. Cressler, J. Sun, C. Stanis, J. Comfort, K. Jenkins, and F. Cardone. IEEE Electron Device Letters, 12 (12): 679-681 (December 1991)Advanced Bipolar Technology for the 1990sJ. Sun, J. Comfort, J. Warnock, J. Cressler, G. Patton, J. Stork, J. Burghartz, D. Harame, E. Crabbé, P. Lu and 2 other author(s). 1991 International Symposium on VLSI Technology, Systems, and Applications : Proceedings of Technical Papers, page 269-273. Piscataway, New Jersey, IEEE, (1991)

PUMA

Disambiguation of "Comfort, James H."

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Device design issues for a high-performance technology with Si or SiGe epitaxial base

Please choose a person to relate this publication to

Univ. -Prof. Dr. James Foster University of Stuttgart

H. Binz

H. Bungartz

H. Binz

H. Binz

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Comfort, James H."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Device design issues for a high-performance technology with Si or SiGe epitaxial base

Please choose a person to relate this publication to

Univ. -Prof. Dr. James Foster University of Stuttgart

H. Binz

H. Bungartz

H. Binz

H. Binz

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Device design issues for a high-performance technology with Si or SiGe epitaxial base