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Single Crystal Emitter Cap for Epitaxial Si- And SiGe-Base Transistors

, , , , , , , , , and . International Electron Devices Meeting (1991 : Washington, DC), page 857-860. Piscataway, New Jersey, IEEE, (1991)
DOI: 10.1109/IEDM.1991.235290

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Single Crystal Emitter Cap for Epitaxial Si- And SiGe-Base Transistors, , , , , , , , , and . International Electron Devices Meeting (1991 : Washington, DC), page 857-860. Piscataway, New Jersey, IEEE, (1991)RF components implemented in an analog SiGe bipolar technology, , , , , , , and . Proceedings of the 1996 BIPOLAR/BiCMOS Circuits and Technology Meeting, page 138-141. Piscataway, New Jersey, IEEE, (1996)Integrated RF components in a SiGe bipolar technology, , , , , , , and . IEEE Journal of Solid-State Circuits, 32 (9): 1440-1445 (September 1997)