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Device design issues for a high-performance technology with Si or SiGe epitaxial base

J. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Microelectronic Engineering, 15 (1-4): 11-14 (October 1991)
DOI: 10.1016/0167-9317(91)90172-A

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Yiwen Yuan University of Stuttgart

Hong Chen University of Stuttgart

Dr. Kaicong Sun University of Stuttgart

Yiyin Chen University of Stuttgart

Jun Chen University of Stuttgart

Other publications of authors with the same name

Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization TechniqueJ. Burghartz, J. Warnock, J. Cressler, C. Stanis, R. McIntosh, J. Sun, J. Comfort, J. Stork, K. Jenkins, E. Crabbé and 2 other author(s). Proceedings of the 22nd European Solid State Device Research Conference Leuven, 14-17 September 1992, page 531-534. Amsterdam, Elsevier, (1992)SPIRIT : A Bipolar/BiCMOS Isolation Technology For High-Performance VLSIJ. Burghartz, A. Cifuentes, R. McIntosh, C. Stanis, J. Cressler, J. Warnock, J. Sun, J. Comfort, and K. Jenkins. Digest of technical papers : 1993 Symposium on VLSI Technology : May 17 - 19, 1993, Kyoto, page 143-144. Piscataway, New Jersey, IEEE, (1993)A Full E-Beam 0.25 um Bipolar Technology With Sub-25 Ps ECL Gate DelayJ. Warnock, J. Cressler, P. Coane, K. Chiong, M. Rothwell, K. Jenkins, J. Burghartz, E. Petrillo, N. Mazzeo, A. Megdanis and 4 other author(s). International Electron Devices Meeting (1991 : Washington, DC), page 956-958. Piscataway, New Jersey, IEEE, (1991)SiGe Heterojunction Bipolar TransistorsJ. Comfort, G. Patton, J. Burghartz, E. Crabbé, J. Sun, J. Stork, and B. Meyerson. (1990)Novel In-Situ Doped Polysilicon Emitter Process With Buried Diffusion Source (BDS)J. Burghartz, A. Megdanis, J. Cressler, J. Sun, C. Stanis, J. Comfort, K. Jenkins, and F. Cardone. IEEE Electron Device Letters, 12 (12): 679-681 (December 1991)Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technologyJ. Burghartz, S. Mader, B. Ginsberg, B. Meyerson, J. Stork, C. Stanis, J. Sun, and M. Polcari. IEEE Transactions on Electron Devices, 38 (2): 378-385 (February 1991)Single Crystal Emitter Cap for Epitaxial Si- And SiGe-Base TransistorsJ. Comfort, E. Crabbé, J. Cressler, W. Lee, J. Sun, J. Malinowski, M. D´Agostino, J. Burghartz, J. Stork, and B. Meyerson. International Electron Devices Meeting (1991 : Washington, DC), page 857-860. Piscataway, New Jersey, IEEE, (1991)Self-aligned bipolar npn transistor with 60 nm epitaxial baseJ. Burghartz, S. Mader, B. Meyerson, B. Ginsberg, J. Stork, and J. Sun. Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 229-232. Piscataway, New Jersey, IEEE, (1989)Device design issues for a high-performance technology with Si or SiGe epitaxial baseJ. Burghartz, J. Cressler, K. Jenkins, J. Sun, J. Stork, J. Comfort, T. Brunner, and C. Stanis. Microelectronic Engineering, 15 (1-4): 11-14 (October 1991)Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base TransistorsJ. Burghartz, J. Comfort, G. Patton, J. Cressler, B. Meyerson, J. Sun, G. Scilla, J. Warnock, B. Ginsberg, K. Jenkins and 3 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 297-300. Piscataway, New Jersey, IEEE, (1990)

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Disambiguation of "Sun, Jack Yuan-Chen"

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Device design issues for a high-performance technology with Si or SiGe epitaxial base

Please choose a person to relate this publication to

Yiwen Yuan University of Stuttgart

Hong Chen University of Stuttgart

Dr. Kaicong Sun University of Stuttgart

Yiyin Chen University of Stuttgart

Jun Chen University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Sun, Jack Yuan-Chen"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Device design issues for a high-performance technology with Si or SiGe epitaxial base

Please choose a person to relate this publication to

Yiwen Yuan University of Stuttgart

Hong Chen University of Stuttgart

Dr. Kaicong Sun University of Stuttgart

Yiyin Chen University of Stuttgart

Jun Chen University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
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Chicago
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Device design issues for a high-performance technology with Si or SiGe epitaxial base