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Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base Transistors

, , , , , , , , , , , , and . Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 297-300. Piscataway, New Jersey, IEEE, (1990)
DOI: 10.1109/IEDM.1990.237171

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Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base Transistors, , , , , , , , , and 3 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 297-300. Piscataway, New Jersey, IEEE, (1990)Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technology, , , , , , , , and . IEEE Electron Device Letters, 11 (7): 288-290 (July 1990)75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar Transistors, , , , , , , , , and . IEEE Electron Device Letters, 11 (4): 171-173 (April 1990)Profile Leverage in Self-Aligned Epitaxial Si Or SiGe Base Bipolar Transistors, , , , , , , , , and 6 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 21-24. Piscataway, New Jersey, IEEE, (1990)63-75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar Technology, , , , , , , , , and . Digest of Technical Papers : 1990 Symposium on VLSI Technology, page 49-50. Piscataway, New Jersey, IEEE, (1990)