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Profile Leverage in Self-Aligned Epitaxial Si Or SiGe Base Bipolar Transistors

, , , , , , , , , , , , , , , and . Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 21-24. Piscataway, New Jersey, IEEE, (1990)
DOI: 10.1109/IEDM.1990.237235

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