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Profile Leverage in Self-Aligned Epitaxial Si Or SiGe Base Bipolar Transistors

J. Comfort, G. Patton, J. Cressler, W. Lee, E. Crabbé, B. Meyerson, J. Sun, J. Stork, P. Lu, J. Burghartz, J. Warnock, K. Toh, G. Scilla, M. D´Agostino, C. Stanis, und K. Jenkins. Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, Seite 21-24. Piscataway, New Jersey, IEEE, (1990)
DOI: 10.1109/IEDM.1990.237235

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L. Ahlgrimm

Lambert Theisen University of Stuttgart

Annika Liebgott

Automated reference-free assessment of MR image quality using an active learning approach: Comparison of Support Vector Machine versus Deep Neural Network classificationS. Gatidis, A. Liebgott, M. Schwartz, P. Martirosian, F. Schick, K. Nikolaou, B. Yang, und T. Küstner. Proceedings of the International Society for Magnetic Resonance in Medicine (ISMRM), Honolulu, Hawaii, USA, (April 2017)

Automated reference-free assessment of MR image quality using an active learning approach: Comparison of Support Vector Machine versus Deep Neural Network classificationS. Gatidis, A. Liebgott, M. Schwartz, P. Martirosian, F. Schick, K. Nikolaou, B. Yang, und T. Küstner. Proceedings of the International Society for Magnetic Resonance in Medicine (ISMRM), Honolulu, Hawaii, USA, (April 2017)An easy-to-use image labeling platform for automatic Magnetic Resonance Image Quality AssessmentT. Küstner, P. Wolf, M. Schwartz, A. Liebgott, F. Schick, S. Gatidis, und B. Yang. Proceedings of the IEEE International Symposium on Biomedical Imaging (ISBI), Melbourne, Australia, (April 2017)Automated image quality assessment in whole-body MRIS. Gatidis, A. Liebgott, H. Schmidt, N. Schwenzer, P. Martirosian, K. Nikolaou, F. Schick, B. Yang, und T. Küstner. Proceedings of the Radiological Society of North America (RSNA), Chicago, USA, (November 2016)

Univ. -Prof. Dr. Remco Ingmar Leine University of Stuttgart

Dr. -Ing. Bernhardt Lüddecke University of Stuttgart

Weitere Publikationen von Autoren mit dem selben Namen

Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base TransistorsJ. Burghartz, J. Comfort, G. Patton, J. Cressler, B. Meyerson, J. Sun, G. Scilla, J. Warnock, B. Ginsberg, K. Jenkins und 3 andere Autor(en). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, Seite 297-300. Piscataway, New Jersey, IEEE, (1990)Unleashing Technology Solutions for a New Era of Connected Intelligence.G. Patton. ESSCIRC, Seite 2. IEEE, (2018)Self-aligned SiGe-base heterojunction bipolar transistor by selective epitaxy emitter window (SEEW) technologyJ. Burghartz, J. Comfort, G. Patton, B. Meyerson, J. Sun, J. Stork, C. Stanis, G. Scilla, und B. Ginsberg. IEEE Electron Device Letters, 11 (7): 288-290 (Juli 1990)75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar TransistorsG. Patton, J. Comfort, B. Meyerson, E. Crabbé, G. Scilla, E. de Fresart, J. Stork, J. Sun, D. Harame, und J. Burghartz. IEEE Electron Device Letters, 11 (4): 171-173 (April 1990)SiGe Heterojunction Bipolar TransistorsJ. Comfort, G. Patton, J. Burghartz, E. Crabbé, J. Sun, J. Stork, und B. Meyerson. (1990)Advanced Bipolar Technology for the 1990sJ. Sun, J. Comfort, J. Warnock, J. Cressler, G. Patton, J. Stork, J. Burghartz, D. Harame, E. Crabbé, P. Lu und 2 andere Autor(en). 1991 International Symposium on VLSI Technology, Systems, and Applications : Proceedings of Technical Papers, Seite 269-273. Piscataway, New Jersey, IEEE, (1991)Profile Leverage in Self-Aligned Epitaxial Si Or SiGe Base Bipolar TransistorsJ. Comfort, G. Patton, J. Cressler, W. Lee, E. Crabbé, B. Meyerson, J. Sun, J. Stork, P. Lu, J. Burghartz und 6 andere Autor(en). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, Seite 21-24. Piscataway, New Jersey, IEEE, (1990)63-75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar TechnologyG. Patton, J. Comfort, B. Meyerson, E. Crabbé, G. Scilla, E. de Fresart, J. Stork, J. Sun, D. Harame, und J. Burghartz. Digest of Technical Papers : 1990 Symposium on VLSI Technology, Seite 49-50. Piscataway, New Jersey, IEEE, (1990)