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Disambiguation of "Meyerson, Bernard S."

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63-75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar Technology

, , , , , , , , , and . Digest of Technical Papers : 1990 Symposium on VLSI Technology, page 49-50. Piscataway, New Jersey, IEEE, (1990)
DOI: 10.1109/VLSIT.1990.111002

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Univ. -Prof. Dr. Bernard Haasdonk University of Stuttgart

S. Schumann

S. Seemann

S. Wartzack

Boettinger S

 

Other publications of authors with the same name

Siliconsgermanium-based mixed-signal technology for optimization of wired and wireless telecommunications.. IBM Journal of Research and Development, 44 (3): 391-408 (2000)Low-temperature Si and Si: Ge epitaxy by ultrahigh vacuum/chemical vapor deposition: Process fundamentals.. IBM Journal of Research and Development, 44 (1): 132-141 (2000)Advanced Bipolar Technology for the 1990s, , , , , , , , , and 2 other author(s). 1991 International Symposium on VLSI Technology, Systems, and Applications : Proceedings of Technical Papers, page 269-273. Piscataway, New Jersey, IEEE, (1991)Profile Leverage in Self-Aligned Epitaxial Si Or SiGe Base Bipolar Transistors, , , , , , , , , and 6 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 21-24. Piscataway, New Jersey, IEEE, (1990)63-75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar Technology, , , , , , , , , and . Digest of Technical Papers : 1990 Symposium on VLSI Technology, page 49-50. Piscataway, New Jersey, IEEE, (1990)Foundation of rf CMOS and SiGe BiCMOS technologies., , , , , , , , , and 12 other author(s). IBM Journal of Research and Development, 47 (2-3): 101-138 (2003)Design automation methodology and rf/analog modeling for rf CMOS and SiGe BiCMOS technologies., , , , , , , , , and 8 other author(s). IBM Journal of Research and Development, 47 (2-3): 139-176 (2003)Keynote speaker: Driving innovation in the "post-silicon" world.. SoCC, page 1-2. IEEE, (2012)Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology, , , , , , , and . IEEE Transactions on Electron Devices, 38 (2): 378-385 (February 1991)Single Crystal Emitter Cap for Epitaxial Si- And SiGe-Base Transistors, , , , , , , , , and . International Electron Devices Meeting (1991 : Washington, DC), page 857-860. Piscataway, New Jersey, IEEE, (1991)