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63-75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar Technology

, , , , , , , , , and . Digest of Technical Papers : 1990 Symposium on VLSI Technology, page 49-50. Piscataway, New Jersey, IEEE, (1990)
DOI: 10.1109/VLSIT.1990.111002

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75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar Transistors, , , , , , , , , and . IEEE Electron Device Letters, 11 (4): 171-173 (April 1990)63-75 GHz F-Sub-T SiGe-Base Heterojunction Bipolar Technology, , , , , , , , , and . Digest of Technical Papers : 1990 Symposium on VLSI Technology, page 49-50. Piscataway, New Jersey, IEEE, (1990)