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Self-aligned bipolar npn transistor with 60 nm epitaxial base

J. Burghartz, S. Mader, B. Meyerson, B. Ginsberg, J. Stork, and J. Sun. Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 229-232. Piscataway, New Jersey, IEEE, (1989)
DOI: 10.1109/IEDM.1989.74267

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Nico Mader University of Stuttgart

Prof. Dr. Siegfried Dietrich University of Stuttgart

R. Koerner

R. Watty

Berndt Siegfried Böpple University of Stuttgart

Other publications of authors with the same name

Selective epitaxial growth of silicon and some potential applicationsB. Ginsberg, J. Burghartz, G. Bronner, and S. Mader. IBM Journal of Research and Development, 34 (6): 816-827 (November 1990)Selective Epitaxy Base for Bipolar TransistorsJ. Burghartz, B. Ginsberg, S. Mader, T. Chen, and D. Harame. ESSDERC 88 : 18th European Solid State Device Research Conference, September 13 - 16, 1988, Montpellier (France), page C4-367-C4-370. Piscataway, New Jersey, IEEE, (1988)Stress-induced dislocations in silicon integrated circuits.P. Fahey, S. Mader, S. Stiffler, R. Mohler, J. Mis, and J. Slinkman. IBM Journal of Research and Development, 36 (2): 158-182 (1992)Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistorsJ. Burghartz, J. Sun, C. Stanis, S. Mader, and J. Warnock. IEEE Transactions on Electron Devices, 39 (6): 1477-1489 (June 1992)A Hard-Sphere Model to Simulate Alloy Thin Films.A. Nowick, and S. Mader. IBM Journal of Research and Development, 9 (5): 358-374 (1965)Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistorsJ. Burghartz, J. Sun, S. Mader, C. Stanis, and B. Ginsberg. Digest of Technical Papers : 1990 Symposium on VLSI Technology, page 55-56. Piscataway, New Jersey, IEEE, (1990)Selective Epitaxial Refill for In-Trench Device FabricationJ. Burghartz, J. Warnock, S. Mader, and B. Ginsberg. Electronics Letters, 25 (20): 1337-1338 (Sep 28, 1989)Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technologyJ. Burghartz, S. Mader, B. Ginsberg, B. Meyerson, J. Stork, C. Stanis, J. Sun, and M. Polcari. IEEE Transactions on Electron Devices, 38 (2): 378-385 (February 1991)Self-aligned bipolar npn transistor with 60 nm epitaxial baseJ. Burghartz, S. Mader, B. Meyerson, B. Ginsberg, J. Stork, and J. Sun. Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989, page 229-232. Piscataway, New Jersey, IEEE, (1989)Sub-30 Ps ECL Circuits Using High-F-Sub-T Si and SiGe Epitaxial Base TransistorsJ. Burghartz, J. Comfort, G. Patton, J. Cressler, B. Meyerson, J. Sun, G. Scilla, J. Warnock, B. Ginsberg, K. Jenkins and 3 other author(s). Electron Devices Meeting, 1990 : IEDM '90 : Technical Digest : International, page 297-300. Piscataway, New Jersey, IEEE, (1990)