Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Holisitic device exploration for 7nm node.

P. Raghavan, M. Bardon, D. Jang, P. Schuddinck, D. Yakimets, J. Ryckaert, A. Mercha, N. Horiguchi, N. Collaert, A. Mocuta, D. Mocuta, Z. Tokei, D. Verkest, A. Thean, and A. Steegen. CICC, page 1-5. IEEE, (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

No persons found for author name Tokei, Zsolt

add a person with the name Tokei, Zsolt

Other publications of authors with the same name

Evaluation of via density and low-k Young's modulus influence on mechanical performance of advanced node multi-level Back-End-Of-Line.L. Kljucar, M. Gonzalez, I. Wolf, K. Croes, J. Bömmels, and Z. Tokei. Microelectronics Reliability, (2016)Reliability challenges for copper low-k dielectrics and copper diffusion barriers.Z. Tokei, Y. Li, and G. Beyer. Microelectronics Reliability, 45 (9-11): 1436-1442 (2005)Stress mitigation of 3D-stacking/packaging induced stresses.K. Croes, V. Cherman, M. Lofrano, H. Zahedmanesh, L. Kljucar, M. Gonzalez, I. Wolf, Z. Tokei, and E. Beyne. IRPS, page 4. IEEE, (2018)As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability.B. Tang, K. Croes, Y. Barbarin, Y. Wang, R. Degraeve, Y. Li, M. Toledano-Luque, T. Kauerauf, J. Bömmels, Z. Tokei and 1 other author(s). Microelectronics Reliability, 54 (9-10): 1675-1679 (2014)Insights into metal drift induced failure in MOL and BEOL.C. Wu, O. Pedreira, A. Lesniewska, Y. Li, I. Ciofi, Z. Tokei, and K. Croes. IRPS, page 3. IEEE, (2018)Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies.T. Bao, D. Yakimets, J. Ryckaert, I. Ciofi, R. Baert, A. Veloso, J. Bömmels, N. Collaert, P. Roussel, S. Demuynck and 6 other author(s). ESSDERC, page 102-105. IEEE, (2014)Constant voltage electromigration for advanced BEOL copper interconnects.B. Tang, K. Croes, N. Jourdan, J. Bömmels, Z. Tokei, I. Wolf, E. Wilcox, and T. McMullen. IRPS, page 2. IEEE, (2015)Design considerations for the mechanical integrity of airgaps in nano-interconnects under chip-package interaction; a numerical investigation.H. Zahedmanesh, M. Gonzalez, I. Ciofi, K. Croes, J. Bömmels, and Z. Tokei. Microelectronics Reliability, (2016)Low-Frequency Noise Measurements to Characterize Cu-Electromigration Down to 44nm Metal Pitch.S. Beyne, O. Pedreira, I. Wolf, Z. Tokei, and K. Croes. IRPS, page 1-6. IEEE, (2019)Logic Scaling Options for the Next 10 Years: From FinFet to CFET, from Dual Damascene to Semi Damascene.Z. Tokei. FPGA, page 49. ACM, (2022)

PUMA

Disambiguation of "Tokei, Zsolt"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Holisitic device exploration for 7nm node.

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Tokei, Zsolt"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Holisitic device exploration for 7nm node.

Please choose a person to relate this publication to

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Holisitic device exploration for 7nm node.