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Disambiguation of "Degraeve, Robin"

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As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability.

, , , , , , , , , , and . Microelectronics Reliability, 54 (9-10): 1675-1679 (2014)

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To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Robin Göbel University of Stuttgart

Univ. -Prof. Dr. Robin Ghosh University of Stuttgart

Prof. Dr. Robin Hahn University of Stuttgart

Robin Wickersheim University of Stuttgart

Robin Gerl University of Stuttgart

 

Other publications of authors with the same name

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability., , , and . Microelectronics Reliability, 47 (4-5): 559-566 (2007)A new method for the analysis of high-resolution SILC data., , , , , , , , , and . Microelectronics Reliability, 43 (9-11): 1483-1488 (2003)Distribution and generation of traps in SiO2/Al2O3 gate stacks., , , , , and . Microelectronics Reliability, 47 (4-5): 525-527 (2007)Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study., , , , , and . Microelectronics Reliability, 42 (4-5): 555-564 (2002)Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit., , , , , , and . ESSDERC, page 146-149. IEEE, (2018)High-resolution SILC measurements of thin SiO2 at ultra low voltages., , , , , , , , , and . Microelectronics Reliability, 42 (9-11): 1485-1489 (2002)A multi-bit/cell PUF using analog breakdown positions in CMOS., , , , , , , and . IRPS, page 2-1. IEEE, (2018)A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS., , , , , and . J. Solid-State Circuits, 54 (10): 2765-2776 (2019)Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current., , , , , , and . ESSDERC, page 262-265. IEEE, (2015)Cost-effective cleaning and high-quality thin gate oxides., , , , , , , , , and 8 other author(s). IBM Journal of Research and Development, 43 (3): 339-350 (1999)