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New insights on the PBTI phenomena in SiON pMOSFETs., , , , , , und . Microelectron. Reliab., 52 (9-10): 1891-1894 (2012)Evidence for source side injection hot carrier effects on lateral DMOS transistors., , , , , , , und . Microelectronics Reliability, 44 (9-11): 1621-1624 (2004)High-resolution SILC measurements of thin SiO2 at ultra low voltages., , , , , , , , , und . Microelectronics Reliability, 42 (9-11): 1485-1489 (2002)New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure., , , und . Microelectronics Reliability, 48 (8-9): 1509-1512 (2008)Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors., , , und . Microelectronics Reliability, 47 (9-11): 1416-1418 (2007)Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices., , , und . Microelectronics Reliability, 47 (9-11): 1512-1516 (2007)A new method for the analysis of high-resolution SILC data., , , , , , , , , und . Microelectronics Reliability, 43 (9-11): 1483-1488 (2003)NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique., , , und . Microelectronics Reliability, 48 (8-9): 1310-1312 (2008)Reduction of test effort. Looking for more acceleration for reliable components for automotive applications., , , und . Microelectronics Reliability, 48 (8-9): 1490-1493 (2008)HCS degradation of 5 nm oxide high-voltage PLDMOS., , , , , und . Microelectronics Reliability, 54 (9-10): 1883-1886 (2014)