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Robin Rainer Herkert University of Stuttgart

Replication Code for: Greedy Kernel Methods for Approximating Breakthrough Curves for Reactive Flow from 3D Porous Geometry Data. Software, (2024)Related to: R. Herkert, P. Buchfink, T. Wenzel, B. Haasdonk, P. Toktaliev, O. Iliev (2024), "Greedy Kernel Methods for Approximating Breakthrough Curves for Reactive Flow from 3D Porous Geometry Data". arXiv: 2405.19170.
 

Weitere Publikationen von Autoren mit dem selben Namen

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability., , , und . Microelectronics Reliability, 47 (4-5): 559-566 (2007)A new method for the analysis of high-resolution SILC data., , , , , , , , , und . Microelectronics Reliability, 43 (9-11): 1483-1488 (2003)Distribution and generation of traps in SiO2/Al2O3 gate stacks., , , , , und . Microelectronics Reliability, 47 (4-5): 525-527 (2007)Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study., , , , , und . Microelectronics Reliability, 42 (4-5): 555-564 (2002)Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit., , , , , , und . ESSDERC, Seite 146-149. IEEE, (2018)High-resolution SILC measurements of thin SiO2 at ultra low voltages., , , , , , , , , und . Microelectronics Reliability, 42 (9-11): 1485-1489 (2002)A multi-bit/cell PUF using analog breakdown positions in CMOS., , , , , , , und . IRPS, Seite 2-1. IEEE, (2018)Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current., , , , , , und . ESSDERC, Seite 262-265. IEEE, (2015)A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS., , , , , und . J. Solid-State Circuits, 54 (10): 2765-2776 (2019)Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications., , , , , , und . ESSDERC, Seite 62-65. IEEE, (2018)