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Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current.

, , , , , , and . ESSDERC, page 262-265. IEEE, (2015)

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Temperature dependence of the programmed states in GST-based multilevel phase-change memories., , , and . ICECS, page 186-189. IEEE, (2008)Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic Applications., , , , , , and . IRPS, page 1-6. IEEE, (2019)Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM., , , , , and . ESSDERC, page 114-117. IEEE, (2015)A Multi-Level-Cell Bipolar-Selected Phase-Change Memory., , , , , , , , , and 6 other author(s). ISSCC, page 428-429. IEEE, (2008)A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage., , , , , , , , , and 6 other author(s). J. Solid-State Circuits, 44 (1): 217-227 (2009)Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate., , , , , , , , , and . ESSDERC, page 66-69. IEEE, (2018)Impact of Control Signal Non-Idealties on Two-Phase Charge Pumps., , and . ISCAS, page 1549-1552. IEEE, (2007)High-Efficiency Regulated Charge Pump for Non-Volatile Memories., , and . ICECS, page 720-723. IEEE, (2006)Experimenting an Embedded-sensor Network for Early Warning of Natural Risks Due to Fast Failures along Railways., , , , , , and . IMTA, page 85-91. SciTePress, (2015)A low-power low-voltage MOSFET-only voltage reference., , , , and . ISCAS (1), page 57-60. IEEE, (2004)