Author of the publication

A fully-integrated 40-phase flying-capacitance-dithered switched-capacitor voltage regulator with 6mV output ripple.

, , , , , , , and . VLSIC, page 336-. IEEE, (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

No persons found for author name Chang, Leland
add a person with the name Chang, Leland
 

Other publications of authors with the same name

Low-Power Circuit Analysis and Design Based on Heterojunction Tunneling Transistors (HETTs)., , , , , , , and . IEEE Trans. VLSI Syst., 21 (9): 1632-1643 (2013)An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches., , , , , , , and . J. Solid-State Circuits, 43 (4): 956-963 (2008)A fully-integrated 40-phase flying-capacitance-dithered switched-capacitor voltage regulator with 6mV output ripple., , , , , , , and . VLSIC, page 336-. IEEE, (2015)Near-threshold operation for power-efficient computing?: it depends..., and . DAC, page 1159-1163. ACM, (2012)A Scalable Multi- TeraOPS Deep Learning Processor Core for AI Trainina and Inference., , , , , , , , , and 21 other author(s). VLSI Circuits, page 35-36. IEEE, (2018)A 512kb 8T SRAM macro operating down to 0.57V with an AC-coupled sense amplifier and embedded data-retention-voltage sensor in 45nm SOI CMOS., , , and . ISSCC, page 350-351. IEEE, (2010)A 4R2W register file for a 2.3GHz wire-speed POWER™ processor with double-pumped write operation., , , , , , , , , and 4 other author(s). ISSCC, page 256-258. IEEE, (2011)Highlights of the ISSCC 2013 Processors and High Performance Digital Sessions., , , , and . J. Solid-State Circuits, 49 (1): 4-8 (2014)Across the Stack Opportunities for Deep Learning Acceleration., , , , , , , , , and 21 other author(s). ISLPED, page 35:1-35:2. ACM, (2018)A 512kb 8T SRAM Macro Operating Down to 0.57 V With an AC-Coupled Sense Amplifier and Embedded Data-Retention-Voltage Sensor in 45 nm SOI CMOS., , , and . J. Solid-State Circuits, 46 (1): 85-96 (2011)