Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Guidelines for intermediate back end of line (BEOL) for 3D sequential integration., , , , , , , , , and 18 other author(s). ESSDERC, page 252-255. IEEE, (2017)New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges., , , , and . Microelectronics Reliability, (2018)Investigation of NBTI Dynamic Behavior with Ultra-Fast Measurement., , , and . IRPS, page 1-6. IEEE, (2019)Key parameters driving transistor degradation in advanced strained SiGe channels., , , , , , , and . IRPS, page 4-1. IEEE, (2018)FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding., , , , and . Microelectronics Reliability, 47 (2-3): 295-301 (2007)Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology., , , , , , and . IRPS, page 1-5. IEEE, (2019)Performance & reliability of 3D architectures (πfet, Finfet, Ωfet)., , , , , , , , , and . IRPS, page 6. IEEE, (2018)Integrated Test Structures for Reliability Investigation under Dynamic Stimuli., , , , , and . IOLTS, page 1-5. IEEE, (2018)28nm UTBB FDSOI product reliability/performance trade-off optimization through body bias operation., , , , and . IRPS, page 6. IEEE, (2015)Microscopic scale characterization and modeling of transistor degradation under HC stress., , , , , , , and . Microelectronics Reliability, 52 (11): 2513-2520 (2012)