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Online Junction Temperature Monitoring of Wide Bandgap power transistors using Quasi Turn-on Delay Time as Temperature Sensitive Electrical Parameter

, , , , , , and . in. Proc. ECCE Asia, (2021)

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Online Junction Temperature Monitoring of Wide Bandgap power transistors using Quasi Turn-on Delay Time as Temperature Sensitive Electrical Parameter, , , , , , and . in. Proc. ECCE Asia, (2021)Non-Destructive Failure Analysis of Power Devices via Time-Domain Reflectometry, , , and . in. Proc. CASE, Lille, France, (May 2021)Characterisation of the Junction Temperature of Gallium Nitride Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter, , , , , , and . in 10th International Conference on Power Electronics, Machines and Drives, Nottingham, UK, (2020)Threshold voltage instability under application-oriented power cycling conditions for SiC power devices, , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (May 2020)Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter, , , , and . in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter, , , , , , and . in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)Characterization of Threshold Voltage for Application-Oriented Power Cycling Conditions for Wide-Bandgap Power Devices, , , , , and . in. Proc. PCIM Europe digital days, Nuremberg, Germany, (July 2020)