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Online Junction Temperature Monitoring of Wide Bandgap power transistors using Quasi Turn-on Delay Time as Temperature Sensitive Electrical Parameter

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Comparison of Different Methods for the Characterization of Online Junction Temperature of a Gallium-Nitride Power Transistor, , , and . in Proc. International Conference on Integrated Power Electronics Systems (CIPS), Berlin, (March 2022)Characterization of the Junction Temperature of SiC Power Devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter, , , , , , and . CIPS 2020; 11th International Conference on Integrated Power Electronics Systems, page 1-6. (March 2020)Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC, , , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (May 2020)A 600 V GaN-on-Si Power IC with Integrated Gate Driver, Freewheeling Diode, Temperature and Current Sensors and Auxiliary Devices, , , , , , and . in Proc. 11th International Conference on Integrated Power Electronics Systems, CIPS, Berlin, (2020)Robust Approach for Characterization of Junction Temperature of SiC power devices via Quasi-Threshold Voltage as Temperature Sensitive Electrical Parameter, , , , , , and . in Proc. Applied Power Electronics Conf. (APEC), New Orleans, (March 2020)Accurate online junction temperature estimation using acquisition circuit temperature for on-state voltage measurement, , and . 23rd European Conference on Power Electronics and Applications (EPE), (2021)Development of a powerful gate-driver-circuit for high-frequency control of a DC/DC-converter based on gallium nitride transistors, , , and . in Proc. PCIM Europe Conference, (2021)Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC, , , , , , and . PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, page 1-7. (July 2020)Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC, , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (May 2020)Online Junction Temperature Monitoring of Wide Bandgap power transistors using Quasi Turn-on Delay Time as Temperature Sensitive Electrical Parameter, , , , , , and . in. Proc. ECCE Asia, (2021)