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Disambiguation of "Moench, S."

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Static and Dynamic Characterization of a Monolithic Integrated Temperature Sensor in a 600 V GaN Power IC

, , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (May 2020)

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S. Schumann

S. Seemann

S. Wartzack

Boettinger S

S. Toro

 

Other publications of authors with the same name

GaN Active Diode for Low-Loss Rectification, , , , , , and . in. Proc. 33nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)A 600 V p-GaN Gate HEMT with Intrinsic Freewheeling Schottky-Diode in a GaN Power IC with Bootstrapped Driver and Sensors, , , , , and . in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2020)Monolithic Integrated AlGaN/GaN Power Converter Topologies on High-Voltage AlN/GaN Superlattice Buffer, , , , , , , , , and 1 other author(s). Physica Status Solidi A: Applications and Materials Science, (September 2020)Integrated Current Sensing in GaN Power ICs, , , , , and . in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2019)Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate Terminations, , , , and . in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICs, , , , , , , , and . in Proc. PCIM Europe Conference, (2021)PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors, , , , , , , , , and 3 other author(s). IEEE Transactions on Power Electronics, 36 (1): 83-86 (2021)Four Terminal \C-V\ Characterization Technique for Lateral Power \GaN-on-Si\ \HEMTs\ Based on 3-Port \S-Parameter\ Measurements, , and . CIPS 2018 - 10th International Conference on Integrated Power Electronics Systems (CIPS 2018), Stuttgart, Germany, (March 2018)Towards Highly-Integrated High-Voltage Multi-MHz GaN-on-Si Power ICs and Modules, , , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (2018)A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts, , , , , , and . in. Proc. 32nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2020)