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GaN Active Diode for Low-Loss Rectification

M. Basler, R. Reiner, S. Moench, P. Waltereit, R. Quay, I. Kallfass, and O. Ambacher. in. Proc. 33nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)

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Maximilian Overbeck

European debates during the Libya crisis of 2011: shared identity, divergent actionM. Overbeck. European Security, 23 (4): 583-600 (2014)

Alexandra Christina Oßwald University of Stuttgart

Hon. -Prof. Dr. Hans Opower University of Stuttgart

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Marius Oei University of Stuttgart

Other publications of authors with the same name

Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMTS. Mönch, R. Reiner, B. Weiss, P. Waltereit, R. Quay, M. Costa, A. Barner, O. Ambacher, and I. Kallfass. 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), page 92-97. Piscataway, NJ, IEEE, (2015)Capacitive Characteristics of GaN Half-Bridges for Various Si and SOI Substrate TerminationsS. Moench, R. Reiner, P. Waltereit, O. Ambacher, and I. Kallfass. in Proc. International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2021)Wireless Sub-THz Communication System with High Data Rate Enabled by RF Photonics and Active MMIC TechnologyS. Koenig, D. Lopez-Diaz, J. Antes, F. Boes, R. Henneberger, A. Leuther, A. Tessmann, R. Schmogrow, D. Hillerkuss, R. Palmer and 6 other author(s). in Proc. IEEE Photonics Conference, La Jolla, (2014)Broadband MMIC Tuners Dedicated to Noise Parameter Measurements at Cryogenic TemperaturesD. Bruch, M. Seelmann-Eggebert, I. Kallfass, A. Leuther, M. Schlechtweg, and O. Ambacher. in Proc. International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC), Dublin, (2012)High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICsM. Basler, S. Moench, R. Reiner, F. Benkhelifa, G. Weidinger, G. Weis, R. Quay, I. Kallfass, and O. Ambacher. in Proc. PCIM Europe Conference, (2021)Determination of Suitable mHEMT Transistor Dimensioning for Power Amplification at 210 GHz by Comprehensive MeasurementsS. Diebold, I. Kallfass, H. Massler, A. Leuther, A. Tessmann, P. Pahl, S. Koch, M. Siegel, and O. Ambacher. in Proc. 5th European Microwave Integrated Circuit Conf., Paris, (2010)Advanced mHEMT MMICs for 220 GHz High-Resolution Imaging SystemsS. Chartier, A. Tessmann, A. Leuther, R. Weber, I. Kallfass, M. Schlechtweg, S. Stanko, H. Essen, and O. Ambacher. physica status solidi C6, (2009)Metamorphic HEMT Technology for Low-noise ApplicationsA. Leuther, A. Tessmann, I. Kallfass, R. Loesch, M. Seelmann-Eggebert, N. Wadefalk, F. Schaefer, J. Gallego Puyol, M. Schlechtweg, M. Mikulla and 1 other author(s). in Proc. 20th Int. Conf. on Indium Phosphide and Related Materials, (2009)Effect of Substrate Termination on Turn-On Switching Time in High-Voltage GaN-on-Si IC with 600 V HEMT and Gate DriverS. Mönch, R. Reiner, B. Weiss, P. Waltereit, R. Quay, O. Ambacher, and I. Kallfass. in Proc. 5th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2017)Design and model studies for solid-state power amplification at 210 GHzS. Diebold, I. Kallfass, H. Massler, M. Seelmann-Eggebert, A. Leuther, A. Tessmann, P. Pahl, S. Koch, and O. Ambacher. Int. Journal of Microwave and Wireless Technologies, 3 (Special Issue 03): 339--346 (2011)